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Title: Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes

Abstract

Here, the internal quantum efficiencies (IQE) and carrier lifetimes of semipolar ($$20\bar{2}$$$$\bar{1}$$) InGaN/GaN LEDs with different active regions are measured using temperature-dependent, carrier-density-dependent, and time-resolved photoluminescence. Three active regions are investigated: one 12-nm-thick single quantum well (SQW), two 6-nm-thick QWs, and three 4-nm-thick QWs. The IQE is highest for the 12-nm-thick SQW and decreases as the well width decreases. The radiative lifetimes are similar for all structures, while the nonradiative lifetimes decrease as the well width decreases. The superior IQE and longer nonradiative lifetime of the SQW structure suggests using thick SQW active regions for high brightness semipolar ($$20\bar{2}$$$$\bar{1}$$) LEDs.

Authors:
 [1];  [1];  [1];  [2];  [2];  [3];  [3];  [1]
+ Show Author Affiliations
  1. Univ. of New Mexico, Albuquerque, NM (United States)
  2. Univ. of California, Santa Barbara, CA (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Univ. of New Mexico, Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
Contributing Org.:
Sandia National Laboratories, Solid State Lighting and Energy Electronics Center (SSLEEC), University of New Mexico
OSTI Identifier:
1337779
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Optics Express
Additional Journal Information:
Journal Volume: 25; Journal Issue: 3; Journal ID: ISSN 1094-4087
Publisher:
Optical Society of America (OSA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; light emitting diodes; spectroscopy; time-resolved; photoluminescence; Quantum-well, -wire and -dot devices

Citation Formats

Okur, Serdal, Nami, Mohsen, Rishinaramangalam, Ashwin K., Oh, Sang H., DenBaars, Steve P., Liu, Sheng, Brener, Igal, and Feezell, Daniel F. Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes. United States: N. p., 2017. Web. doi:10.1364/OE.25.002178.
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Okur, Serdal, Nami, Mohsen, Rishinaramangalam, Ashwin K., Oh, Sang H., DenBaars, Steve P., Liu, Sheng, Brener, Igal, & Feezell, Daniel F. Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes. United States. https://doi.org/10.1364/OE.25.002178
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Okur, Serdal, Nami, Mohsen, Rishinaramangalam, Ashwin K., Oh, Sang H., DenBaars, Steve P., Liu, Sheng, Brener, Igal, and Feezell, Daniel F. Thu . "Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes". United States. https://doi.org/10.1364/OE.25.002178. https://www.osti.gov/servlets/purl/1337779.
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@article{osti_1337779,
title = {Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes},
author = {Okur, Serdal and Nami, Mohsen and Rishinaramangalam, Ashwin K. and Oh, Sang H. and DenBaars, Steve P. and Liu, Sheng and Brener, Igal and Feezell, Daniel F.},
abstractNote = {Here, the internal quantum efficiencies (IQE) and carrier lifetimes of semipolar ($20\bar{2}$$\bar{1}$) InGaN/GaN LEDs with different active regions are measured using temperature-dependent, carrier-density-dependent, and time-resolved photoluminescence. Three active regions are investigated: one 12-nm-thick single quantum well (SQW), two 6-nm-thick QWs, and three 4-nm-thick QWs. The IQE is highest for the 12-nm-thick SQW and decreases as the well width decreases. The radiative lifetimes are similar for all structures, while the nonradiative lifetimes decrease as the well width decreases. The superior IQE and longer nonradiative lifetime of the SQW structure suggests using thick SQW active regions for high brightness semipolar ($20\bar{2}$$\bar{1}$) LEDs.},
doi = {10.1364/OE.25.002178},
journal = {Optics Express},
number = 3,
volume = 25,
place = {United States},
year = {Thu Jan 26 00:00:00 EST 2017},
month = {Thu Jan 26 00:00:00 EST 2017}
}
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https://doi.org/10.1364/OE.25.002178
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    Works referencing / citing this record:

    The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes
    journal, December 2017

    • Hopkins, M. A.; Allsopp, D. W. E.; Kappers, M. J.
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