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Title: The effect of shallow vs. deep level doping on the performance of thermoelectric materials

Authors:
ORCiD logo [1] ;  [1] ;  [1] ;  [2] ;  [3] ;  [1]
  1. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  2. Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, USA
  3. Department of Physics and TcSUH, University of Houston, Houston, Texas 77204, USA
Publication Date:
Grant/Contract Number:
SC0001299/DE-FG02- 09ER46577
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 26; Related Information: CHORUS Timestamp: 2018-02-14 17:06:29; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1337590