skip to main content

DOE PAGESDOE PAGES

Title: Soft x-ray spectroscopy of a complex heterojunction in high-efficiency thin-film photovoltaics: Intermixing and Zn speciation at the Zn(O,S)/Cu(In,Ga)Se 2 interface

In this study, the chemical structure of the Zn(O,S)/Cu(In,Ga)Se 2 interface in high-efficiency photovoltaic devices is investigated using X-ray photoelectron and Auger electron spectroscopy, as well as soft X-ray emission spectroscopy. We find that the Ga/(Ga+In) ratio at the absorber surface does not change with the formation of the Zn(O,S)/Cu(In,Ga)Se 2 interface. Furthermore, we find evidence for Zn in multiple bonding environments, including ZnS, ZnO, Zn(OH) 2, and ZnSe. We also observe dehydrogenation of the Zn(O,S) buffer layer after Ar+ ion treatment. Similar to high-efficiency CdS/Cu(In,Ga)Se 2 devices, intermixing occurs at the interface, with diffusion of Se into the buffer, and the formation of S—In and/or S—Ga bonds at or close to the interface.
Authors:
 [1] ;  [2] ;  [2] ;  [1] ;  [3] ;  [1] ;  [1] ;  [4] ;  [5] ;  [6] ;  [2] ;  [6]
  1. Univ. of Nevada, Las Vegas (UNLV), Las Vegas, NV (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Karlsruhe Institute of Technology (KIT), Eggenstein-Leopoldshafen (Germany); Karlsruhe Institute of Technology (KIT), Karlsruhe (Germany)
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  5. Univ. of Nevada, Las Vegas (UNLV), Las Vegas, NV (United States); Helmholtz-Zentrum Berlin fur Materialien und Energie GmbH, Berlin (Germany); Brandenburgische Technische Univ. Cottbus-Senftenberg, Cottbus (Germany)
  6. Univ. of Nevada, Las Vegas (UNLV), Las Vegas, NV (United States); Karlsruhe Institute of Technology (KIT), Eggenstein-Leopoldshafen (Germany); Karlsruhe Institute of Technology (KIT), Karlsruhe (Germany)
Publication Date:
Report Number(s):
NREL/JA-5K00-67637
Journal ID: ISSN 1944-8244
Grant/Contract Number:
AC36-08GO28308; AC02-05CH11231
Type:
Accepted Manuscript
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Volume: 8; Journal Issue: 48; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S); SunShot Foundational Program to Advance Cell Efficiency (F-PACE); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; alternative buffer layers; chalcopyrite thin-film solar cell; chemical structure; X-ray emission spectroscopy; X-ray photoelectron spectroscopy; Zn(O,S)
OSTI Identifier:
1337540
Alternate Identifier(s):
OSTI ID: 1474987

Mezher, Michelle, Garris, Rebekah, Mansfield, Lorelle M., Blum, Monika, Hauschild, Dirk, Horsley, Kimberly, Duncan, Douglas A., Yang, Wanli, Bär, Marcus, Weinhardt, Lothar, Ramanathan, Kannan, and Heske, Clemens. Soft x-ray spectroscopy of a complex heterojunction in high-efficiency thin-film photovoltaics: Intermixing and Zn speciation at the Zn(O,S)/Cu(In,Ga)Se2 interface. United States: N. p., Web. doi:10.1021/acsami.6b09245.
Mezher, Michelle, Garris, Rebekah, Mansfield, Lorelle M., Blum, Monika, Hauschild, Dirk, Horsley, Kimberly, Duncan, Douglas A., Yang, Wanli, Bär, Marcus, Weinhardt, Lothar, Ramanathan, Kannan, & Heske, Clemens. Soft x-ray spectroscopy of a complex heterojunction in high-efficiency thin-film photovoltaics: Intermixing and Zn speciation at the Zn(O,S)/Cu(In,Ga)Se2 interface. United States. doi:10.1021/acsami.6b09245.
Mezher, Michelle, Garris, Rebekah, Mansfield, Lorelle M., Blum, Monika, Hauschild, Dirk, Horsley, Kimberly, Duncan, Douglas A., Yang, Wanli, Bär, Marcus, Weinhardt, Lothar, Ramanathan, Kannan, and Heske, Clemens. 2016. "Soft x-ray spectroscopy of a complex heterojunction in high-efficiency thin-film photovoltaics: Intermixing and Zn speciation at the Zn(O,S)/Cu(In,Ga)Se2 interface". United States. doi:10.1021/acsami.6b09245. https://www.osti.gov/servlets/purl/1337540.
@article{osti_1337540,
title = {Soft x-ray spectroscopy of a complex heterojunction in high-efficiency thin-film photovoltaics: Intermixing and Zn speciation at the Zn(O,S)/Cu(In,Ga)Se2 interface},
author = {Mezher, Michelle and Garris, Rebekah and Mansfield, Lorelle M. and Blum, Monika and Hauschild, Dirk and Horsley, Kimberly and Duncan, Douglas A. and Yang, Wanli and Bär, Marcus and Weinhardt, Lothar and Ramanathan, Kannan and Heske, Clemens},
abstractNote = {In this study, the chemical structure of the Zn(O,S)/Cu(In,Ga)Se2 interface in high-efficiency photovoltaic devices is investigated using X-ray photoelectron and Auger electron spectroscopy, as well as soft X-ray emission spectroscopy. We find that the Ga/(Ga+In) ratio at the absorber surface does not change with the formation of the Zn(O,S)/Cu(In,Ga)Se2 interface. Furthermore, we find evidence for Zn in multiple bonding environments, including ZnS, ZnO, Zn(OH)2, and ZnSe. We also observe dehydrogenation of the Zn(O,S) buffer layer after Ar+ ion treatment. Similar to high-efficiency CdS/Cu(In,Ga)Se2 devices, intermixing occurs at the interface, with diffusion of Se into the buffer, and the formation of S—In and/or S—Ga bonds at or close to the interface.},
doi = {10.1021/acsami.6b09245},
journal = {ACS Applied Materials and Interfaces},
number = 48,
volume = 8,
place = {United States},
year = {2016},
month = {11}
}