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Title: Spin transport in antiferromagnetic NiO and magnetoresistance in Y 3Fe 5O 12/NiO/Pt structures

Here, we have studied spin transport and magnetoresistance in yttrium iron garnet (YIG)/NiO/Pt trilayers with varied NiO thickness. To characterize the spin transport through NiO we excite ferromagnetic resonance in YIG with a microwave frequency magnetic field and detect the voltage associated with the inverse spin-Hall effect (ISHE) in the Pt layer. The ISHE signal is found to decay exponentially with the NiO thickness with a characteristic decay length of 3.9 nm. This is contrasted with the magnetoresistance in these same structures. The symmetry of the magnetoresistive response is consistent with spin-Hall magnetoresistance (SMR). However, in contrast to the ISHE response, as the NiO thickness increases the SMR signal goes towards zero abruptly at a NiO thickness of ≃ 4 nm, highlighting the different length scales associated with the spin-transport in NiO and SMR in such trilayers.
Authors:
ORCiD logo [1] ;  [1] ; ORCiD logo [2] ;  [2] ;  [3] ;  [1]
  1. New York Univ., New York, NY (United States)
  2. Colorado State Univ., Fort Collins, CO (United States)
  3. Stanford Synchrotron Radiation Lightsource, Menlo Park, CA (United States)
Publication Date:
Grant/Contract Number:
SC0012670
Type:
Published Article
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 7; Journal Issue: 5; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)
Research Org:
New York Univ., New York, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; 36 MATERIALS SCIENCE; Magnetoresistance; Electric measurements; Antiferromagnetism; Sputter deposition; Multilayers
OSTI Identifier:
1337435
Alternate Identifier(s):
OSTI ID: 1393525; OSTI ID: 1421315

Hung, Yu -Ming, Hahn, Christian, Chang, Houchen, Wu, Mingzhong, Ohldag, Hendrik, and Kent, Andrew D. Spin transport in antiferromagnetic NiO and magnetoresistance in Y3Fe5O12/NiO/Pt structures. United States: N. p., Web. doi:10.1063/1.4972998.
Hung, Yu -Ming, Hahn, Christian, Chang, Houchen, Wu, Mingzhong, Ohldag, Hendrik, & Kent, Andrew D. Spin transport in antiferromagnetic NiO and magnetoresistance in Y3Fe5O12/NiO/Pt structures. United States. doi:10.1063/1.4972998.
Hung, Yu -Ming, Hahn, Christian, Chang, Houchen, Wu, Mingzhong, Ohldag, Hendrik, and Kent, Andrew D. 2016. "Spin transport in antiferromagnetic NiO and magnetoresistance in Y3Fe5O12/NiO/Pt structures". United States. doi:10.1063/1.4972998.
@article{osti_1337435,
title = {Spin transport in antiferromagnetic NiO and magnetoresistance in Y3Fe5O12/NiO/Pt structures},
author = {Hung, Yu -Ming and Hahn, Christian and Chang, Houchen and Wu, Mingzhong and Ohldag, Hendrik and Kent, Andrew D.},
abstractNote = {Here, we have studied spin transport and magnetoresistance in yttrium iron garnet (YIG)/NiO/Pt trilayers with varied NiO thickness. To characterize the spin transport through NiO we excite ferromagnetic resonance in YIG with a microwave frequency magnetic field and detect the voltage associated with the inverse spin-Hall effect (ISHE) in the Pt layer. The ISHE signal is found to decay exponentially with the NiO thickness with a characteristic decay length of 3.9 nm. This is contrasted with the magnetoresistance in these same structures. The symmetry of the magnetoresistive response is consistent with spin-Hall magnetoresistance (SMR). However, in contrast to the ISHE response, as the NiO thickness increases the SMR signal goes towards zero abruptly at a NiO thickness of ≃ 4 nm, highlighting the different length scales associated with the spin-transport in NiO and SMR in such trilayers.},
doi = {10.1063/1.4972998},
journal = {AIP Advances},
number = 5,
volume = 7,
place = {United States},
year = {2016},
month = {12}
}