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Title: Irradiation-induced grain growth and defect evolution in nanocrystalline zirconia with doped grain boundaries

Abstract

Grain boundaries are effective sinks for radiation-induced defects, ultimately impacting the radiation tolerance of nanocrystalline materials (dense materials with nanosized grains) against net defect accumulation. However, irradiation-induced grain growth leads to grain boundary area decrease, shortening potential benefits of nanostructures. A possible approach to mitigate this is the introduction of dopants to target a decrease in grain boundary mobility or a reduction in grain boundary energy to eliminate driving forces for grain growth (using similar strategies as to control thermal growth). Here, in this study, we tested this concept in nanocrystalline zirconia doped with lanthanum. Although the dopant is observed to segregate to the grain boundaries, causing grain boundary energy decrease and promoting dragging forces for thermally activated boundary movement, irradiation induced grain growth could not be avoided under heavy ion irradiation, suggesting a different growth mechanism as compared to thermal growth. Furthermore, it is apparent that reducing the grain boundary energy reduced the effectiveness of the grain boundary as sinks, and the number of defects in the doped material is higher than in undoped (La-free) YSZ.

Authors:
 [1];  [2]; ORCiD logo [3];  [3];  [4];  [3];  [5];  [1];  [1]
  1. Univ. of California, Davis, CA (United States). Department of Materials Science and Engineering & NEAT ORU
  2. Arizona State Univ., Tempe, AZ (United States). John Cowley Center for HREM, LE-CSSS
  3. Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Materials Science and Technology Division
  4. Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Materials Physics and Applications Division
  5. Univ. of Oregon, Eugene, OR (United States). Department of Chemistry and Biochemistry
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1337107
Report Number(s):
LA-UR-16-23776
Journal ID: ISSN 1463-9076
Grant/Contract Number:  
AC52-06NA25396
Resource Type:
Accepted Manuscript
Journal Name:
Physical Chemistry Chemical Physics. PCCP
Additional Journal Information:
Journal Volume: 18; Journal Issue: 25; Journal ID: ISSN 1463-9076
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Dey, Sanchita, Mardinly, John, Wang, Yongqiang, Valdez, James Anthony, Holesinger, Terry George, Uberuaga, Blas P., Ditto, Jeff J., Drazin, John W., and Castro, Ricardo H. R. Irradiation-induced grain growth and defect evolution in nanocrystalline zirconia with doped grain boundaries. United States: N. p., 2016. Web. https://doi.org/10.1039/C6CP01763K.
Dey, Sanchita, Mardinly, John, Wang, Yongqiang, Valdez, James Anthony, Holesinger, Terry George, Uberuaga, Blas P., Ditto, Jeff J., Drazin, John W., & Castro, Ricardo H. R. Irradiation-induced grain growth and defect evolution in nanocrystalline zirconia with doped grain boundaries. United States. https://doi.org/10.1039/C6CP01763K
Dey, Sanchita, Mardinly, John, Wang, Yongqiang, Valdez, James Anthony, Holesinger, Terry George, Uberuaga, Blas P., Ditto, Jeff J., Drazin, John W., and Castro, Ricardo H. R. Fri . "Irradiation-induced grain growth and defect evolution in nanocrystalline zirconia with doped grain boundaries". United States. https://doi.org/10.1039/C6CP01763K. https://www.osti.gov/servlets/purl/1337107.
@article{osti_1337107,
title = {Irradiation-induced grain growth and defect evolution in nanocrystalline zirconia with doped grain boundaries},
author = {Dey, Sanchita and Mardinly, John and Wang, Yongqiang and Valdez, James Anthony and Holesinger, Terry George and Uberuaga, Blas P. and Ditto, Jeff J. and Drazin, John W. and Castro, Ricardo H. R.},
abstractNote = {Grain boundaries are effective sinks for radiation-induced defects, ultimately impacting the radiation tolerance of nanocrystalline materials (dense materials with nanosized grains) against net defect accumulation. However, irradiation-induced grain growth leads to grain boundary area decrease, shortening potential benefits of nanostructures. A possible approach to mitigate this is the introduction of dopants to target a decrease in grain boundary mobility or a reduction in grain boundary energy to eliminate driving forces for grain growth (using similar strategies as to control thermal growth). Here, in this study, we tested this concept in nanocrystalline zirconia doped with lanthanum. Although the dopant is observed to segregate to the grain boundaries, causing grain boundary energy decrease and promoting dragging forces for thermally activated boundary movement, irradiation induced grain growth could not be avoided under heavy ion irradiation, suggesting a different growth mechanism as compared to thermal growth. Furthermore, it is apparent that reducing the grain boundary energy reduced the effectiveness of the grain boundary as sinks, and the number of defects in the doped material is higher than in undoped (La-free) YSZ.},
doi = {10.1039/C6CP01763K},
journal = {Physical Chemistry Chemical Physics. PCCP},
number = 25,
volume = 18,
place = {United States},
year = {2016},
month = {5}
}

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