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Title: Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging

In the transition from graphene to graphite, the addition of each individual graphene layer modifies the electronic structure and produces a different material with unique properties. Controlled growth of few-layer graphene is therefore of fundamental interest and will provide access to materials with engineered electronic structure. Here we combine isothermal growth and etching experiments with in situ scanning electron microscopy to reveal the stacking sequence and interlayer coupling strength in few-layer graphene. The observed layer-dependent etching rates reveal the relative strength of the graphene graphene and graphene substrate interaction and the resulting mode of adlayer growth. Scanning tunnelling microscopy and density functional theory calculations confirm a strong coupling between graphene edge atoms and platinum. Simulated etching confirms that etching can be viewed as reversed growth. This work demonstrates that real-time imaging under controlled atmosphere is a powerful method for designing synthesis protocols for sp2 carbon nanostructures in between graphene and graphite.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [1] ;  [5] ;  [2] ;  [1] ;  [1]
  1. Max Planck Society, Berlin (Germany). Fritz Haber Institute
  2. Hong Kong Polytechnic Univ., Hong Kong (China). Inst. of Textiles and Clothing
  3. Suzhou Inst. of Nano-Tech and NanoBionics (China). 3Vacuum Interconnected Nanotech Workstation
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  5. Chinese Academy of Sciences (CAS), Beijing (China)
Publication Date:
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 7; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; graphene; chemical vapor deposition; in situ; interlayer coupling
OSTI Identifier:
1337042

Wang, Zhu-Jun, Dong, Jichen, Cui, Yi, Eres, Gyula, Timpe, Olaf, Fu, Qiang, Ding, Feng, Willinger, Marc-Georg, and Schloegl, R. Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging. United States: N. p., Web. doi:10.1038/ncomms13256.
Wang, Zhu-Jun, Dong, Jichen, Cui, Yi, Eres, Gyula, Timpe, Olaf, Fu, Qiang, Ding, Feng, Willinger, Marc-Georg, & Schloegl, R. Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging. United States. doi:10.1038/ncomms13256.
Wang, Zhu-Jun, Dong, Jichen, Cui, Yi, Eres, Gyula, Timpe, Olaf, Fu, Qiang, Ding, Feng, Willinger, Marc-Georg, and Schloegl, R. 2016. "Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging". United States. doi:10.1038/ncomms13256. https://www.osti.gov/servlets/purl/1337042.
@article{osti_1337042,
title = {Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging},
author = {Wang, Zhu-Jun and Dong, Jichen and Cui, Yi and Eres, Gyula and Timpe, Olaf and Fu, Qiang and Ding, Feng and Willinger, Marc-Georg and Schloegl, R.},
abstractNote = {In the transition from graphene to graphite, the addition of each individual graphene layer modifies the electronic structure and produces a different material with unique properties. Controlled growth of few-layer graphene is therefore of fundamental interest and will provide access to materials with engineered electronic structure. Here we combine isothermal growth and etching experiments with in situ scanning electron microscopy to reveal the stacking sequence and interlayer coupling strength in few-layer graphene. The observed layer-dependent etching rates reveal the relative strength of the graphene graphene and graphene substrate interaction and the resulting mode of adlayer growth. Scanning tunnelling microscopy and density functional theory calculations confirm a strong coupling between graphene edge atoms and platinum. Simulated etching confirms that etching can be viewed as reversed growth. This work demonstrates that real-time imaging under controlled atmosphere is a powerful method for designing synthesis protocols for sp2 carbon nanostructures in between graphene and graphite.},
doi = {10.1038/ncomms13256},
journal = {Nature Communications},
number = ,
volume = 7,
place = {United States},
year = {2016},
month = {10}
}