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Title: Undoped p -type GaN 1– x Sb x alloys: Effects of annealing

Authors:
ORCiD logo [1] ; ORCiD logo [2] ;  [3] ; ORCiD logo [4] ;  [5] ;  [6] ;  [6] ;  [7]
  1. Department of Applied Physics, Aalto University School of Science, P.O. Box 15100, FIN-00076 Aalto, Espoo, Finland, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  2. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA, Institute of Materials, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
  3. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA, Mechanical Engineering Department, University of California, Berkeley, California 94720, USA
  4. Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong
  5. Mechanical Engineering Department, University of California, Berkeley, California 94720, USA
  6. US Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783, USA
  7. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 25; Related Information: CHORUS Timestamp: 2018-02-15 00:21:05; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1336844