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Title: Effectiveness of BaTiO 3 dielectric patches on YBa 2Cu 3O 7 thin films for MEM switches

A micro-electro-mechanical (MEM) switch built on a superconducting microstrip filter will be utilized to investigate BaTiO 3 dielectric patches for functional switching points of contact. Actuation voltage resulting from the MEM switch provokes static friction between the bridge membrane and BaTiO 3 insulation layer. Furthermore, the dielectric patch crystal structure and roughness affect the ability of repetitively switching cycles and lifetime. We performed a series of experiments using different deposition methods and RF magnetron sputtering was found to be the best deposition process for the BaTiO 3 layer. The effect examination of surface morphology will be presented using characterization techniques as x-ray diffraction, SEM and AFM for an optimum switching device. The thin film is made of YBa 2Cu 3O 7 deposited on LaAlO 3 substrate by pulsed laser deposition. In our work, the dielectric material sputtering pressure is set at 9.5x10 -6 Torr. The argon gas is released through a mass-flow controller to purge the system prior to deposition. RF power is 85 W at a distance of 9 cm. The behavior of Au membranes built on ultimate BaTiO 3 patches will be shown as part of the results. These novel surface patterns will in turn be used inmore » modelling other RF MEM switch devices such as distributed-satellite communication system operating at cryogenic temperatures.« less
Authors:
 [1] ;  [1] ;  [2] ;  [3] ;  [3]
  1. Univ. of Turabo, Gurabo (Puerto Rico). Dept. of Electrical Engineering
  2. Univ. of Engineering and Techology, Lima (Peru). Dept. of Electrical Engineering
  3. Florida Intl Univ., Miami, FL (United States). Dept. of Electrical Engineering
Publication Date:
Grant/Contract Number:
NA0000672
Type:
Accepted Manuscript
Journal Name:
Journal of Physics. Conference Series (Online)
Additional Journal Information:
Journal Name: Journal of Physics. Conference Series (Online); Journal Volume: 507; Journal Issue: 4; Journal ID: ISSN 1742-6596
Publisher:
Institute of Physics (IOP)
Research Org:
Univ. of Turabo, Gurabo (Puerto Rico)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA); US Air Force Office of Scientific Research (AFOSR)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; micro-electro-mechanical (MEM); superconducting micro strip
OSTI Identifier:
1336562

Vargas, J., Hijazi, Y., Noel, J., Vlasov, Y., and Larkins, G.. Effectiveness of BaTiO3 dielectric patches on YBa2Cu3O7 thin films for MEM switches. United States: N. p., Web. doi:10.1088/1742-6596/507/4/042045.
Vargas, J., Hijazi, Y., Noel, J., Vlasov, Y., & Larkins, G.. Effectiveness of BaTiO3 dielectric patches on YBa2Cu3O7 thin films for MEM switches. United States. doi:10.1088/1742-6596/507/4/042045.
Vargas, J., Hijazi, Y., Noel, J., Vlasov, Y., and Larkins, G.. 2014. "Effectiveness of BaTiO3 dielectric patches on YBa2Cu3O7 thin films for MEM switches". United States. doi:10.1088/1742-6596/507/4/042045. https://www.osti.gov/servlets/purl/1336562.
@article{osti_1336562,
title = {Effectiveness of BaTiO3 dielectric patches on YBa2Cu3O7 thin films for MEM switches},
author = {Vargas, J. and Hijazi, Y. and Noel, J. and Vlasov, Y. and Larkins, G.},
abstractNote = {A micro-electro-mechanical (MEM) switch built on a superconducting microstrip filter will be utilized to investigate BaTiO3 dielectric patches for functional switching points of contact. Actuation voltage resulting from the MEM switch provokes static friction between the bridge membrane and BaTiO3 insulation layer. Furthermore, the dielectric patch crystal structure and roughness affect the ability of repetitively switching cycles and lifetime. We performed a series of experiments using different deposition methods and RF magnetron sputtering was found to be the best deposition process for the BaTiO3 layer. The effect examination of surface morphology will be presented using characterization techniques as x-ray diffraction, SEM and AFM for an optimum switching device. The thin film is made of YBa2Cu3O7 deposited on LaAlO3 substrate by pulsed laser deposition. In our work, the dielectric material sputtering pressure is set at 9.5x10-6 Torr. The argon gas is released through a mass-flow controller to purge the system prior to deposition. RF power is 85 W at a distance of 9 cm. The behavior of Au membranes built on ultimate BaTiO3 patches will be shown as part of the results. These novel surface patterns will in turn be used in modelling other RF MEM switch devices such as distributed-satellite communication system operating at cryogenic temperatures.},
doi = {10.1088/1742-6596/507/4/042045},
journal = {Journal of Physics. Conference Series (Online)},
number = 4,
volume = 507,
place = {United States},
year = {2014},
month = {5}
}