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Title: Effects of band anticrossing on the temperature dependence of the band gap of ZnSe 1−x O x alloys

Authors:
; ; ; ;
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Publisher's Accepted Manuscript
Journal Name:
Semiconductor Science and Technology
Additional Journal Information:
Journal Name: Semiconductor Science and Technology Journal Volume: 32 Journal Issue: 1; Journal ID: ISSN 0268-1242
Publisher:
IOP Publishing
Sponsoring Org:
USDOE
Country of Publication:
United Kingdom
Language:
English
OSTI Identifier:
1336512

Wełna, M., Baranowski, M., Kudrawiec, R., Nabetani, Y., and Walukiewicz, W.. Effects of band anticrossing on the temperature dependence of the band gap of ZnSe 1−x O x alloys. United Kingdom: N. p., Web. doi:10.1088/1361-6641/32/1/015005.
Wełna, M., Baranowski, M., Kudrawiec, R., Nabetani, Y., & Walukiewicz, W.. Effects of band anticrossing on the temperature dependence of the band gap of ZnSe 1−x O x alloys. United Kingdom. doi:10.1088/1361-6641/32/1/015005.
Wełna, M., Baranowski, M., Kudrawiec, R., Nabetani, Y., and Walukiewicz, W.. 2016. "Effects of band anticrossing on the temperature dependence of the band gap of ZnSe 1−x O x alloys". United Kingdom. doi:10.1088/1361-6641/32/1/015005.
@article{osti_1336512,
title = {Effects of band anticrossing on the temperature dependence of the band gap of ZnSe 1−x O x alloys},
author = {Wełna, M. and Baranowski, M. and Kudrawiec, R. and Nabetani, Y. and Walukiewicz, W.},
abstractNote = {},
doi = {10.1088/1361-6641/32/1/015005},
journal = {Semiconductor Science and Technology},
number = 1,
volume = 32,
place = {United Kingdom},
year = {2016},
month = {12}
}