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Title: Observation of non-Fermi liquid behavior in hole-doped LiFe1-x VxAs

Abstract

Here we synthesized a series of V-doped LiFe1₋xVxAs single crystals. The superconducting transition temperature Tc of LiFeAs decreases rapidly at a rate of 7 K per 1% V. The Hall coefficient of LiFeAs switches from negative to positive with 4.2% V doping, showing that V doping introduces hole carriers. This observation is further confirmed by the evaluation of the Fermi surface volume measured by angle-resolved photoemission spectroscopy (ARPES), from which a 0.3 hole doping per V atom introduced is deduced. Interestingly, the introduction of holes does not follow a rigid band shift. We also show that the temperature evolution of the electrical resistivity as a function of doping is consistent with a crossover from a Fermi liquid to a non-Fermi liquid. Our ARPES data indicate that the non-Fermi liquid behavior is mostly enhanced when one of the hole dxz/dyz Fermi surfaces is well nested by the antiferromagnetic wave vector to the inner electron Fermi surface pocket with the dxy orbital character. In conclusion, the magnetic susceptibility of LiFe1₋xVxAs suggests the presence of strong magnetic impurities following V doping, thus providing a natural explanation to the rapid suppression of superconductivity upon V doping.

Authors:
 [1];  [1];  [2];  [1];  [1];  [1];  [1];  [1];  [1];  [3];  [4];  [5];  [5];  [2];  [2]
  1. Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Physics. Beijing National Lab. for Condensed Matter Physics (BNLCP-CAS)
  2. Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Physics. Beijing National Lab. for Condensed Matter Physics (BNLCP-CAS); Collaborative Innovation Center of Quantum Matter, Beijing (China); Univ. of Chinese Academy of Sciences, Beijing (China). School of Physical Sciences
  3. Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.
  4. Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Physics. Beijing National Lab. for Condensed Matter Physics (BNLCP-CAS); Collaborative Innovation Center of Quantum Matter, Beijing (China)
  5. Science and Technology Facilities Council (STFC), Harwell Campus, Oxford (United Kingdom). Diamond Light Source, Ltd.
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1336220
Report Number(s):
BNL-113246-2016-JA
Journal ID: ISSN 2469-9950; R&D Project: PO011; KC0201060
Grant/Contract Number:  
SC00112704
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 94; Journal Issue: 9; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Xing, L. Y., Shi, X., Richard, P., Wang, X. C., Liu, Q. Q., Lv, B. Q., Ma, J. -Z., Fu, B. B., Kong, L. -Y., Miao, H., Qian, T., Kim, T. K., Hoesch, M., Ding, H., and Jin, C. Q. Observation of non-Fermi liquid behavior in hole-doped LiFe1-x VxAs. United States: N. p., 2016. Web. doi:10.1103/PhysRevB.94.094524.
Xing, L. Y., Shi, X., Richard, P., Wang, X. C., Liu, Q. Q., Lv, B. Q., Ma, J. -Z., Fu, B. B., Kong, L. -Y., Miao, H., Qian, T., Kim, T. K., Hoesch, M., Ding, H., & Jin, C. Q. Observation of non-Fermi liquid behavior in hole-doped LiFe1-x VxAs. United States. doi:10.1103/PhysRevB.94.094524.
Xing, L. Y., Shi, X., Richard, P., Wang, X. C., Liu, Q. Q., Lv, B. Q., Ma, J. -Z., Fu, B. B., Kong, L. -Y., Miao, H., Qian, T., Kim, T. K., Hoesch, M., Ding, H., and Jin, C. Q. Wed . "Observation of non-Fermi liquid behavior in hole-doped LiFe1-x VxAs". United States. doi:10.1103/PhysRevB.94.094524. https://www.osti.gov/servlets/purl/1336220.
@article{osti_1336220,
title = {Observation of non-Fermi liquid behavior in hole-doped LiFe1-x VxAs},
author = {Xing, L. Y. and Shi, X. and Richard, P. and Wang, X. C. and Liu, Q. Q. and Lv, B. Q. and Ma, J. -Z. and Fu, B. B. and Kong, L. -Y. and Miao, H. and Qian, T. and Kim, T. K. and Hoesch, M. and Ding, H. and Jin, C. Q.},
abstractNote = {Here we synthesized a series of V-doped LiFe1₋xVxAs single crystals. The superconducting transition temperature Tc of LiFeAs decreases rapidly at a rate of 7 K per 1% V. The Hall coefficient of LiFeAs switches from negative to positive with 4.2% V doping, showing that V doping introduces hole carriers. This observation is further confirmed by the evaluation of the Fermi surface volume measured by angle-resolved photoemission spectroscopy (ARPES), from which a 0.3 hole doping per V atom introduced is deduced. Interestingly, the introduction of holes does not follow a rigid band shift. We also show that the temperature evolution of the electrical resistivity as a function of doping is consistent with a crossover from a Fermi liquid to a non-Fermi liquid. Our ARPES data indicate that the non-Fermi liquid behavior is mostly enhanced when one of the hole dxz/dyz Fermi surfaces is well nested by the antiferromagnetic wave vector to the inner electron Fermi surface pocket with the dxy orbital character. In conclusion, the magnetic susceptibility of LiFe1₋xVxAs suggests the presence of strong magnetic impurities following V doping, thus providing a natural explanation to the rapid suppression of superconductivity upon V doping.},
doi = {10.1103/PhysRevB.94.094524},
journal = {Physical Review B},
number = 9,
volume = 94,
place = {United States},
year = {2016},
month = {9}
}

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