Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices
Abstract
We found that bulk metals and metal chalcogenides dissolve in primary amine–dithiol solvent mixtures at ambient conditions. Thin-films of CuS, SnS, ZnS, Cu2Sn(Sx,Se1-x)3, and Cu2ZnSn(SxSe1-x)4 (0 ≤ x ≤ 1) were deposited using the as-dissolved solutions. Furthermore, Cu2ZnSn(SxSe1-x)4 solar cells with efficiencies of 6.84% and 7.02% under AM1.5 illumination were fabricated from two example solution precursors, respectively.
- Authors:
-
- Purdue Univ., West Lafayette, IN (United States). School of Materials Engineering
- Purdue Univ., West Lafayette, IN (United States). School of Chemical Engineering
- Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials
- Publication Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1336124
- Report Number(s):
- BNL-112586-2016-JA
Journal ID: ISSN 1359-7345; CHCOFS; KC0403020
- Grant/Contract Number:
- SC00112704
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ChemComm
- Additional Journal Information:
- Journal Volume: 52; Journal Issue: 28; Journal ID: ISSN 1359-7345
- Publisher:
- Royal Society of Chemistry
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; photovoltaics; solar cells; crystal growth; Center for Functional Nanomaterials
Citation Formats
Zhang, Ruihong, Cho, Seonghyuk, Lim, Daw Gen, Hu, Xianyi, Stach, Eric A., Handwerker, Carol A., and Agrawal, Rakesh. Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices. United States: N. p., 2016.
Web. doi:10.1039/c5cc09915c.
Zhang, Ruihong, Cho, Seonghyuk, Lim, Daw Gen, Hu, Xianyi, Stach, Eric A., Handwerker, Carol A., & Agrawal, Rakesh. Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices. United States. https://doi.org/10.1039/c5cc09915c
Zhang, Ruihong, Cho, Seonghyuk, Lim, Daw Gen, Hu, Xianyi, Stach, Eric A., Handwerker, Carol A., and Agrawal, Rakesh. Tue .
"Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices". United States. https://doi.org/10.1039/c5cc09915c. https://www.osti.gov/servlets/purl/1336124.
@article{osti_1336124,
title = {Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices},
author = {Zhang, Ruihong and Cho, Seonghyuk and Lim, Daw Gen and Hu, Xianyi and Stach, Eric A. and Handwerker, Carol A. and Agrawal, Rakesh},
abstractNote = {We found that bulk metals and metal chalcogenides dissolve in primary amine–dithiol solvent mixtures at ambient conditions. Thin-films of CuS, SnS, ZnS, Cu2Sn(Sx,Se1-x)3, and Cu2ZnSn(SxSe1-x)4 (0 ≤ x ≤ 1) were deposited using the as-dissolved solutions. Furthermore, Cu2ZnSn(SxSe1-x)4 solar cells with efficiencies of 6.84% and 7.02% under AM1.5 illumination were fabricated from two example solution precursors, respectively.},
doi = {10.1039/c5cc09915c},
journal = {ChemComm},
number = 28,
volume = 52,
place = {United States},
year = {Tue Mar 15 00:00:00 EDT 2016},
month = {Tue Mar 15 00:00:00 EDT 2016}
}
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