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Title: Ionizing Energy Depositions After Fast Neutron Interactions in Silicon

In our study we present the ionizing energy depositions in a 300 μm thick silicon layer after fast neutron impact. With the Time-of-Flight (ToF) technique, the ionizing energy deposition spectra of recoil silicons and secondary charged particles were assigned to (quasi-)monoenergetic neutron energies in the range from 180 keV to hundreds of MeV. We also show and interpret representative measured energy spectra. By separating the ionizing energy losses of the recoil silicon from energy depositions by products of nuclear reactions, the competition of ionizing (IEL) and non-ionizing energy losses (NIEL) of a recoil silicon within the silicon lattice was investigated. Furthermore, the data give supplementary information to the results of a previous measurement and are compared with different theoretical predictions.
ORCiD logo [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [3]
  1. Czech Technical Univ. in Prague (Czech Republic). Inst. of Experimental and Applied Physics
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
  3. European Organization for Nuclear Research (CERN), Geneva (Switzerland)
Publication Date:
Report Number(s):
Journal ID: ISSN 0018-9499; KA2101020
Grant/Contract Number:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 63; Journal Issue: 4; Journal ID: ISSN 0018-9499
Institute of Electrical and Electronics Engineers (IEEE)
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
Country of Publication:
United States
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; Neutron radiation effects; noionizing energy loss; semiconductor detectors
OSTI Identifier: