Ionizing Energy Depositions After Fast Neutron Interactions in Silicon

Journal Article · 01 June 2016 · IEEE Transactions on Nuclear Science

DOI: https://doi.org/10.1109/TNS.2016.2574961 · OSTI ID:1336086

Bergmann, Benedikt  ^[1]; Pospisil, Stanislav ^[1]; Caicedo, Ivan ^[1]; Kierstead, James ^[2]; Takai, Helio ^[2]; Frojdh, Erik ^[3]

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1. Czech Technical Univ. in Prague (Czech Republic). Inst. of Experimental and Applied Physics
2. Brookhaven National Lab. (BNL), Upton, NY (United States)
3. European Organization for Nuclear Research (CERN), Geneva (Switzerland)

In our study we present the ionizing energy depositions in a 300 μm thick silicon layer after fast neutron impact. With the Time-of-Flight (ToF) technique, the ionizing energy deposition spectra of recoil silicons and secondary charged particles were assigned to (quasi-)monoenergetic neutron energies in the range from 180 keV to hundreds of MeV. We also show and interpret representative measured energy spectra. By separating the ionizing energy losses of the recoil silicon from energy depositions by products of nuclear reactions, the competition of ionizing (IEL) and non-ionizing energy losses (NIEL) of a recoil silicon within the silicon lattice was investigated. Furthermore, the data give supplementary information to the results of a previous measurement and are compared with different theoretical predictions.

• Research Organization: Brookhaven National Laboratory (BNL), Upton, NY (United States)
• Sponsoring Organization: USDOE Office of Science (SC), High Energy Physics (HEP)
• Grant/Contract Number: SC00112704
• OSTI ID: 1336086
• Report Number(s): BNL-112485-2016-JA; KA2101020
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 63, Issue 4; ISSN 0018-9499
• Publisher: Institute of Electrical and Electronics Engineers (IEEE)Copyright Statement
• Country of Publication: United States
• Language: English