Ionizing Energy Depositions After Fast Neutron Interactions in Silicon

Bergmann, Benedikt; Pospisil, Stanislav; Caicedo, Ivan; Kierstead, James; Takai, Helio; Frojdh, Erik

doi:10.1109/TNS.2016.2574961

Title: Ionizing Energy Depositions After Fast Neutron Interactions in Silicon

Full Record
Other Related Research

Abstract

In our study we present the ionizing energy depositions in a 300 μm thick silicon layer after fast neutron impact. With the Time-of-Flight (ToF) technique, the ionizing energy deposition spectra of recoil silicons and secondary charged particles were assigned to (quasi-)monoenergetic neutron energies in the range from 180 keV to hundreds of MeV. We also show and interpret representative measured energy spectra. By separating the ionizing energy losses of the recoil silicon from energy depositions by products of nuclear reactions, the competition of ionizing (IEL) and non-ionizing energy losses (NIEL) of a recoil silicon within the silicon lattice was investigated. Furthermore, the data give supplementary information to the results of a previous measurement and are compared with different theoretical predictions.

Authors:

^[1]; Pospisil, Stanislav ^[1]; Caicedo, Ivan ^[1]; Kierstead, James ^[2]; Takai, Helio ^[2]; Frojdh, Erik ^[3]

Czech Technical Univ. in Prague (Czech Republic). Inst. of Experimental and Applied Physics
Brookhaven National Lab. (BNL), Upton, NY (United States)
European Organization for Nuclear Research (CERN), Geneva (Switzerland)

Publication Date:: 2016-06-01

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Org.:: USDOE Office of Science (SC), High Energy Physics (HEP)

OSTI Identifier:: 1336086

Report Number(s):: BNL-112485-2016-JA
Journal ID: ISSN 0018-9499; KA2101020

Grant/Contract Number:: SC00112704

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Transactions on Nuclear Science

Additional Journal Information:: Journal Volume: 63; Journal Issue: 4; Journal ID: ISSN 0018-9499

Publisher:: Institute of Electrical and Electronics Engineers (IEEE)

Country of Publication:: United States

Language:: English

Subject:: 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; Neutron radiation effects; noionizing energy loss; semiconductor detectors

Citation Formats


                    Bergmann, Benedikt, Pospisil, Stanislav, Caicedo, Ivan, Kierstead, James, Takai, Helio, and Frojdh, Erik. Ionizing Energy Depositions After Fast Neutron Interactions in Silicon.  United States: N. p., 2016. 
Web.  doi:10.1109/TNS.2016.2574961.

Copy to clipboard


                    Bergmann, Benedikt, Pospisil, Stanislav, Caicedo, Ivan, Kierstead, James, Takai, Helio, & Frojdh, Erik. Ionizing Energy Depositions After Fast Neutron Interactions in Silicon.  United States.  https://doi.org/10.1109/TNS.2016.2574961

Copy to clipboard


                    Bergmann, Benedikt, Pospisil, Stanislav, Caicedo, Ivan, Kierstead, James, Takai, Helio, and Frojdh, Erik. Wed .  
"Ionizing Energy Depositions After Fast Neutron Interactions in Silicon".  United States.  https://doi.org/10.1109/TNS.2016.2574961.  https://www.osti.gov/servlets/purl/1336086.

Copy to clipboard


                    
@article{osti_1336086,

  title        = {Ionizing Energy Depositions After Fast Neutron Interactions in Silicon},

  author       = {Bergmann, Benedikt and Pospisil, Stanislav and Caicedo, Ivan and Kierstead, James and Takai, Helio and Frojdh, Erik},

  abstractNote = {In our study we present the ionizing energy depositions in a 300 μm thick silicon layer after fast neutron impact. With the Time-of-Flight (ToF) technique, the ionizing energy deposition spectra of recoil silicons and secondary charged particles were assigned to (quasi-)monoenergetic neutron energies in the range from 180 keV to hundreds of MeV. We also show and interpret representative measured energy spectra. By separating the ionizing energy losses of the recoil silicon from energy depositions by products of nuclear reactions, the competition of ionizing (IEL) and non-ionizing energy losses (NIEL) of a recoil silicon within the silicon lattice was investigated. Furthermore, the data give supplementary information to the results of a previous measurement and are compared with different theoretical predictions.},

  doi          = {10.1109/TNS.2016.2574961},

  journal      = {IEEE Transactions on Nuclear Science},

  number       = 4,

  volume       = 63,

  place        = {United States},

  year         = {2016},

  month        = {6}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1109/TNS.2016.2574961

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 11 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

The ECR-plasma deposition of silicon nitride on a tunnel oxide

Conference Barbour, J C ; Stein, H J ; Outten, C A

Gate dielectric-quality silicon nitride films were deposited on a tunnel oxide from an SiH{sub 4}/N{sub 2} gas mixture using an electron cyclotron resonance (ECR) plasma. Electrical characteristics depend not only upon the quality of the nitride film but also upon the state of the interfacial oxide. Quasi-static and 1 MHz capacitance-voltage measurements show that a nitride film deposited at 200{degrees}C on 2 nm thick thermally-grown oxide (tunnel oxide) on an unbiased Si substrate has an interface state density of 1.5 {times} 10{sup 11} /cm{sup 2}-eV. Time-of-flight elastic recoil detection (TOF-ERD) was used to examine the level of mixing between themore »« less
Photocurrent from Single Collision 14 MeV Neutrons in GaN and GaAs

Journal Article Jasica, Matthew J. ; Wampler, William R. ; Vizkelethy, Gyorgy ; ... - IEEE Transactions on Nuclear Science

Accurate predictions of device performance in 14 MeV neutron environments relies upon understanding the recoil cascades that may be produced. Recoils from 14 MeV neutrons impinging on both gallium nitride (GaN) and gallium arsenide (GaAs) devices were modeled and compared to the recoil spectra of devices exposed to 14 MeV neutrons. Recoil spectra were generated using nuclear reaction modeling programs and converted into an ionizing energy loss (IEL) spectrum. We measured the recoil IEL spectra by capturing the photocurrent pulses produced by single neutron interactions with the device. Good agreement, with a factor of two, was found between the modelmore »« less
https://doi.org/10.1109/TNS.2019.2949720

Full Text Available
Electronic Stopping Powers in Silicon Carbide

Journal Article Zhang, Yanwen ; Weber, William J ; Wang, Chong M - Physical Review. B, Condensed Matter and Materials Physics, 69(20):205201, 1-9

The stopping powers in silicon carbide (SiC) of nine different ions, ranging from Be to Au, have been determined using a time-of-flight elastic recoil detection analysis (TOF ERDA) set-up. In transmission geometry, the energy loss of ions in a self-supporting SiC film is measured over a continuous range of recoil energies, from tens to hundreds keV/nucleon, using Time-of-Flight (TOF) spectrometry. By essentially calibrating the Si detector for each channel using the TOF spectrometer, the error resulting from nominal energy calibration is eliminated. An uncertainty of less than 4% is achieved in the stopping measurements. Stopping powers predicted by SRIM (Themore »« less
https://doi.org/10.1103/PhysRevB.69.205201
Measurement of electron capture and ionization cross sections for D sub 2 in collision with fast O sup 8+ ions

Journal Article Cheng, S ; Cocke, C L ; Kamber, E Y ; ... - Physical Review, A (General Physics); (USA)

We have measured cross sections for single capture, transfer ionization, single ionization, double ionization, ionization excitation, and transfer excitation for fully stripped oxygen projectiles at energies between 8 and 20 MeV on D{sub 2} molecular targets. Coincidences between charge-analyzed projectiles and recoil D{sup +} and D{sub 2}{sup +} products were measured. The time of flight (TOF) of the recoil, collected by applying an extraction electric field, was used to separate the D{sup +} from D{sub 2}{sup +} ions. TOF spectra taken with no field were used to distinguish the D{sup +} ions from different dissociative channels, including the electronically excitedmore »« less
https://doi.org/10.1103/PhysRevA.42.214
Characterization of a Tunable Quasi-Monoenergetic Neutron Beamfrom Deuteron Breakup

Conference Bleuel, D L ; McMahan, M A ; Ahle, L ; ...

A neutron irradiation facility is being developed at the88-Inch Cyclotron at Lawrence Berkeley National Laboratory for thepurposes of measuring neutron reaction cross sections on radioactivetargets and for radiation effects testing. Applications are of benefit tostockpile stewardship, nuclear astrophysics, next generation advancedfuel reactors, and cosmic radiation biology and electronics in space. Thefacility will supply a tunable, quasi-monoenergetic neutron beam in therange of 10-30 MeV or a white neutron source, produced by deuteronbreakup reactions on thin and thick targets, respectively. Because thedeuteron breakup reaction has not been well studied at intermediateincident deuteron energies, above the target Coulomb barrier and below 56MeV, amore »« less
Full Text Available

Similar Records