Model polymer etching and surface modification by a time modulated RF plasma jet: role of atomic oxygen and water vapor
Abstract
The surface interaction of a well-characterized time modulated radio frequency (RF) plasma jet with polystyrene, poly(methyl methacrylate) and poly(vinyl alcohol) as model polymers is investigated. The RF plasma jet shows fast polymer etching but mild chemical modification with a characteristic carbonate ester and NO formation on the etched surface. By varying the plasma treatment conditions including feed gas composition, environment gaseous composition, and treatment distance, we find that short lived species, especially atomic O for Ar/1% O2 and 1% air plasma and OH for Ar/1% H2O plasma, play an essential role for polymer etching. For O2 containing plasma, we find that atomic O initiates polymer etching and the etching depth mirrors the measured decay of O atoms in the gas phase as the nozzlesurface distance increases. The etching reaction probability of an O atom ranging from 10-4 to 10-3 is consistent with low pressure plasma research. We also find that adding O2 and H2O simultaneously into Ar feed gas quenches polymer etching compared to adding them separately which suggests the reduction of O and OH density in Ar/O2/H2O plasma.
- Authors:
-
- University of Maryland, College Park, MD (United States)
- University of Minnesota, Minneapolis, MN (United States)
- Publication Date:
- Research Org.:
- Univ. of Maryland, College Park, MD (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Fusion Energy Sciences (FES); National Science Foundation (NSF)
- OSTI Identifier:
- 1659744
- Alternate Identifier(s):
- OSTI ID: 1335531; OSTI ID: 1787988
- Grant/Contract Number:
- SC0001939; PHY-1415353
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Physics. D, Applied Physics
- Additional Journal Information:
- Journal Volume: 50; Journal Issue: 3; Journal ID: ISSN 0022-3727
- Publisher:
- IOP Publishing
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; Atmospheric pressure plasma; plasma jet; surface modification; etching; XPS; atomic O; hydroxyl radical; atmospheric pressure plasma, plasma jet, surface modification, etching, XPS, atomic O, hydroxyl radical
Citation Formats
Luan, P., Knoll, A. J., Wang, H., Kondeti, V. K., Bruggeman, P. J., and Oehrlein, G. S. Model polymer etching and surface modification by a time modulated RF plasma jet: role of atomic oxygen and water vapor. United States: N. p., 2016.
Web. doi:10.1088/1361-6463/aa4e97.
Luan, P., Knoll, A. J., Wang, H., Kondeti, V. K., Bruggeman, P. J., & Oehrlein, G. S. Model polymer etching and surface modification by a time modulated RF plasma jet: role of atomic oxygen and water vapor. United States. https://doi.org/10.1088/1361-6463/aa4e97
Luan, P., Knoll, A. J., Wang, H., Kondeti, V. K., Bruggeman, P. J., and Oehrlein, G. S. Tue .
"Model polymer etching and surface modification by a time modulated RF plasma jet: role of atomic oxygen and water vapor". United States. https://doi.org/10.1088/1361-6463/aa4e97. https://www.osti.gov/servlets/purl/1659744.
@article{osti_1659744,
title = {Model polymer etching and surface modification by a time modulated RF plasma jet: role of atomic oxygen and water vapor},
author = {Luan, P. and Knoll, A. J. and Wang, H. and Kondeti, V. K. and Bruggeman, P. J. and Oehrlein, G. S.},
abstractNote = {The surface interaction of a well-characterized time modulated radio frequency (RF) plasma jet with polystyrene, poly(methyl methacrylate) and poly(vinyl alcohol) as model polymers is investigated. The RF plasma jet shows fast polymer etching but mild chemical modification with a characteristic carbonate ester and NO formation on the etched surface. By varying the plasma treatment conditions including feed gas composition, environment gaseous composition, and treatment distance, we find that short lived species, especially atomic O for Ar/1% O2 and 1% air plasma and OH for Ar/1% H2O plasma, play an essential role for polymer etching. For O2 containing plasma, we find that atomic O initiates polymer etching and the etching depth mirrors the measured decay of O atoms in the gas phase as the nozzlesurface distance increases. The etching reaction probability of an O atom ranging from 10-4 to 10-3 is consistent with low pressure plasma research. We also find that adding O2 and H2O simultaneously into Ar feed gas quenches polymer etching compared to adding them separately which suggests the reduction of O and OH density in Ar/O2/H2O plasma.},
doi = {10.1088/1361-6463/aa4e97},
journal = {Journal of Physics. D, Applied Physics},
number = 3,
volume = 50,
place = {United States},
year = {Tue Dec 13 00:00:00 EST 2016},
month = {Tue Dec 13 00:00:00 EST 2016}
}
Web of Science
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