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Title: Single-domain epitaxial silicene on diboride thin films

Epitaxial silicene, which forms spontaneously on ZrB 2(0001) thin films grown on Si(111) wafers, has a periodic stripe domain structure. By adsorbing additional Si atoms on this surface, we find that the domain boundaries vanish, and a single-domain silicene sheet can be prepared without altering its buckled honeycomb structure. The amount of Si required to induce this change suggests that the domain boundaries are made of a local distortion of the silicene honeycomb lattice. LastlThe realization of a single domain sheet with structural and electronic properties close to those of the original striped state demonstrates the high structural flexibility of silicene.
Authors:
 [1] ;  [2] ;  [1] ; ORCiD logo [3] ;  [1] ;  [4] ;  [5] ;  [6] ;  [1]
  1. Japan Advanced Inst. of Science and Technology, Nomi, Ishikawa (Japan). School of Materials Science
  2. Japan Advanced Inst. of Science and Technology, Nomi, Ishikawa (Japan). School of Materials Science; Univ. College London, London (United Kingdom). London Centre for Nanotechnology; niv. College London, London (United Kingdom). Dept. of Chemistry
  3. Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
  4. IBM, Yorktown Heights, NY (United States). Thomas J. Watson Research Center
  5. IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA
  6. London Centre for Nanotechnology, University College London (UCL), London WC1H 0AH, United Kingdom; Department of Chemistry, UCL, London WC1H 0AJ, United Kingdom; Department of Physics and Astronomy, UCL, London WC1E 6BT, United Kingdom
Publication Date:
Report Number(s):
BNL-112106-2016-JA
Journal ID: ISSN 0003-6951; APPLAB; R&D Project: 16083/16083; KC0403020
Grant/Contract Number:
SC0012704; 26790005; 26246002; EP/H026622/1; EP/G036675/1
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 15; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Epitaxy; thin film structure; low energy structure
OSTI Identifier:
1335439