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Title: Bandgap Engineering of Cu(In1-xGax)Se2 Absorber Layers Fabricated using CuInSe2 and CuGaSe2 Targets for One-Step Sputtering Process

Abstract

Here we have demonstrated that the bandgap of Cu(In1-xGax)Se2(CIGS) absorber layers was readily controlled by using a one-step sputtering process. CIGS thin-film sample libraries with different Ga/(In + Ga) ratios were synthesized on soda-lime glass at 550 °C using a combinatorial magnetron sputtering system employing CuInSe2(CIS) and CuGaSe2(CGS) targets. Energy-dispersive X-ray fluorescence spectrometry (EDS-XRF) confirmed that the CIGS films had different Ga/(In + Ga) ratios, which were varied by the sample configuration on the substrate and ranged from 0.2 to 0.9. X-ray diffraction and Raman spectroscopy revealed that the CIGS films had a pure chalcopyrite phase without any secondary phase such as Cu-Se or ordered vacancy compound (OVC), respectively. Furthermore, we found that the optical bandgap energies of the CIGS films determined by transmittance measurements ranged from 1.07 eV to 1.53 eV as the Ga/(In + Ga) ratio increased from 0.2 to 0.9, demonstrating that the one-step sputtering process using CIS and CGS targets is another simple route to control the bandgap energy of the CIGS absorber layer.

Authors:
 [1];  [1];  [2];  [1]
  1. Korea Inst. of Industrial Technology, Gwangju (South Korea). Advanced Photoenergy Lab.
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States). National Center for Photovoltaics
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1334745
Report Number(s):
NREL/JA-5K00-67515
Journal ID: ISSN 2159-3930
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Optical Materials Express
Additional Journal Information:
Journal Volume: 6; Journal Issue: 11; Journal ID: ISSN 2159-3930
Publisher:
Optical Society of America (OSA)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; bandgap; absorber layers; sputtering; thin films

Citation Formats

Park, Jae -Cheol, Lee, Jeon -Ryang, Al-Jassim, Mowafak, and Kim, Tae -Won. Bandgap Engineering of Cu(In1-xGax)Se2 Absorber Layers Fabricated using CuInSe2 and CuGaSe2 Targets for One-Step Sputtering Process. United States: N. p., 2016. Web. doi:10.1364/OME.6.003541.
Park, Jae -Cheol, Lee, Jeon -Ryang, Al-Jassim, Mowafak, & Kim, Tae -Won. Bandgap Engineering of Cu(In1-xGax)Se2 Absorber Layers Fabricated using CuInSe2 and CuGaSe2 Targets for One-Step Sputtering Process. United States. https://doi.org/10.1364/OME.6.003541
Park, Jae -Cheol, Lee, Jeon -Ryang, Al-Jassim, Mowafak, and Kim, Tae -Won. Mon . "Bandgap Engineering of Cu(In1-xGax)Se2 Absorber Layers Fabricated using CuInSe2 and CuGaSe2 Targets for One-Step Sputtering Process". United States. https://doi.org/10.1364/OME.6.003541. https://www.osti.gov/servlets/purl/1334745.
@article{osti_1334745,
title = {Bandgap Engineering of Cu(In1-xGax)Se2 Absorber Layers Fabricated using CuInSe2 and CuGaSe2 Targets for One-Step Sputtering Process},
author = {Park, Jae -Cheol and Lee, Jeon -Ryang and Al-Jassim, Mowafak and Kim, Tae -Won},
abstractNote = {Here we have demonstrated that the bandgap of Cu(In1-xGax)Se2(CIGS) absorber layers was readily controlled by using a one-step sputtering process. CIGS thin-film sample libraries with different Ga/(In + Ga) ratios were synthesized on soda-lime glass at 550 °C using a combinatorial magnetron sputtering system employing CuInSe2(CIS) and CuGaSe2(CGS) targets. Energy-dispersive X-ray fluorescence spectrometry (EDS-XRF) confirmed that the CIGS films had different Ga/(In + Ga) ratios, which were varied by the sample configuration on the substrate and ranged from 0.2 to 0.9. X-ray diffraction and Raman spectroscopy revealed that the CIGS films had a pure chalcopyrite phase without any secondary phase such as Cu-Se or ordered vacancy compound (OVC), respectively. Furthermore, we found that the optical bandgap energies of the CIGS films determined by transmittance measurements ranged from 1.07 eV to 1.53 eV as the Ga/(In + Ga) ratio increased from 0.2 to 0.9, demonstrating that the one-step sputtering process using CIS and CGS targets is another simple route to control the bandgap energy of the CIGS absorber layer.},
doi = {10.1364/OME.6.003541},
journal = {Optical Materials Express},
number = 11,
volume = 6,
place = {United States},
year = {Mon Oct 17 00:00:00 EDT 2016},
month = {Mon Oct 17 00:00:00 EDT 2016}
}

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Works referenced in this record:

Characteristics of Cu(In,Ga)Se2 (CIGS) thin films deposited by a direct solution coating process
journal, February 2012


Structure, morphology and properties of thinned Cu(In, Ga)Se 2 films and solar cells
journal, February 2012


Characterisation of Cu(In,Ga)Se2-based thin film solar cells on polyimide
journal, February 2009


CuGaSe2 solar cells using atomic layer deposited Zn(O,S) and (Zn,Mg)O buffer layers
journal, February 2009


Effects of substrate temperature on the structural and electrical properties of Cu(In,Ga)Se2 thin films
journal, January 2009


Ex-situ and in-situ analyses on reaction mechanism of CuInSe2 (CIS) formed by selenization of sputter deposited CuIn precursor with Se vapor
journal, October 2011


Raman spectroscopy of CuIn1−xGaxSe2 for in-situ monitoring of the composition ratio
journal, April 2011


The limiting efficiency of band gap graded solar cells
journal, September 1998


Influence of indium/gallium gradients on the Cu(In,Ga)Se 2 devices deposited by the co-evaporation without recrystallisation
journal, May 2015


Differential in-depth characterization of co-evaporated Cu(In,Ga)Se2 thin films for solar cell applications
journal, May 2014


Another route to fabricate single-phase chalcogenides by post-selenization of Cu–In–Ga precursors sputter deposited from a single ternary target
journal, August 2009


Post-selenization of stacked precursor layers for CIGS
journal, June 2013


Preparation of CuInGaSe thin films by sputtering and selenization process
journal, January 2003


The effects of the morphology on the CIGS thin films prepared by CuInGa single precursor
journal, January 2011


Structural analysis of Cu(In,Ga)Se2 films fabricated by using sputtering and post-selenization
journal, August 2013


Fabrication of graded band-gap Cu(InGa)Se2 thin-film mini-modules with a Zn(O,S,OH)x buffer layer
journal, December 1997

  • Kushiya, Katsumi; Tachiyuki, Muneyori; Kase, Takahisa
  • Solar Energy Materials and Solar Cells, Vol. 49, Issue 1-4
  • DOI: 10.1016/S0927-0248(97)00204-3

Role of incorporated sulfur into the surface of Cu(InGa)Se2 thin-film absorber
journal, March 2001

  • Nagoya, Yoshinori; Kushiya, Katsumi; Tachiyuki, Muneyori
  • Solar Energy Materials and Solar Cells, Vol. 67, Issue 1-4
  • DOI: 10.1016/S0927-0248(00)00288-9

A promising sputtering route for one-step fabrication of chalcopyrite phase Cu(In,Ga)Se2 absorbers without extra Se supply
journal, August 2012


Cu(In,Ga)Se2 thin films and devices sputtered from a single target without additional selenization
journal, September 2011


Fabrication of Cu(In, Ga)Se2 thin films by sputtering from a single quaternary chalcogenide target
journal, May 2010

  • Shi, J. H.; Li, Z. Q.; Zhang, D. W.
  • Progress in Photovoltaics: Research and Applications, Vol. 19, Issue 2
  • DOI: 10.1002/pip.1001

One-step synthesis of Cu(In,Ga)Se2 absorber layers by magnetron sputtering from a single quaternary target
journal, July 2012


Effects of Ga contents on properties of CIGS thin films and solar cells fabricated by co-evaporation technique
journal, July 2010


Characterization of Cu(In,Ga)Se2 films by Raman scattering
journal, January 2002


Raman Spectra of CuGa x In 1- x Se 2
journal, January 1993

  • Tanino, H.; Deai, H.; Nakanishi, Hisayuki
  • Japanese Journal of Applied Physics, Vol. 32, Issue S3
  • DOI: 10.7567/JJAPS.32S3.436

Se interlayer in CIGS absorption layer for solar cell devices
journal, June 2015


Band gap engineering of tandem structured CIGS compound absorption layer fabricated by sputtering and selenization
journal, June 2013


Properties of high-efficiency CuInGaSe2 thin film solar cells
journal, June 2005


The effects of pulse repetition rate on the structural, optical, and electrical properties of CIGS films grown by pulsed laser deposition
journal, October 2015


Effect of Cu content on the photovoltaic properties of wide bandgap CIGS thin-film solar cells prepared by single-stage process
journal, November 2016


CIGS absorbing layers prepared by RF magnetron sputtering from a single quaternary target
journal, October 2016


Works referencing / citing this record:

One-step RF magnetron sputtering method for preparing Cu(In, Ga)Se2 solar cells
journal, May 2018

  • Wang, Qintao; Zhao, Zhixing; Li, Haimin
  • Journal of Materials Science: Materials in Electronics, Vol. 29, Issue 14
  • DOI: 10.1007/s10854-018-9274-y

Lattice dynamical and elastic properties of mixed quaternary semiconducting alloys CuGa 1− x Al x S 2 and Ag x Cu 1− x GaS 2
journal, November 2018

  • Kushwaha, A. K.; Vishwakarma, M. K.; Akbudak, S.
  • Materials Research Express, Vol. 6, Issue 2
  • DOI: 10.1088/2053-1591/aaeb6b