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Title: Tailoring capping layers to reduce stress gradients in copper metallization

Authors:
 [1] ;  [2] ;  [2] ; ORCiD logo [3]
  1. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA
  2. IBM Semiconductor Research, Albany, New York 12203, USA
  3. GLOBALFOUNDRIES Inc., Albany, New York 12203, USA
Publication Date:
Grant/Contract Number:
AC02-76SF00515; AC02-98CH10886
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 109 Journal Issue: 23; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1334679