Intragrain charge transport in kesterite thin films—Limits arising from carrier localization
Abstract
Intragrain charge carrier mobilities measured by time-resolved terahertz spectroscopy in state of the art Cu2ZnSn(S,Se)4 kesterite thin films are found to increase from 32 to 140 cm2V-1s-1 with increasing Se content. The mobilities are limited by carrier localization on the nanometer-scale, which takes place within the first 2 ps after carrier excitation. The localization strength obtained from the Drude-Smith model is found to be independent of the excited photocarrier density. This is in accordance with bandgap fluctuations as a cause of the localized transport. Lastly, charge carrier localization is a general issue in the probed kesterite thin films, which were deposited by coevaporation, colloidal inks, and sputtering followed by annealing with varying Se/S contents and yield 4.9%-10.0% efficiency in the completed device.
- Authors:
-
[6];
- Helmholtz-Zentrum Berlin (HZB), (Germany). German Research Centre for Materials and Energy, Dept. of Structure and Dynamics of Energy Materials
- Helmholtz-Zentrum Berlin (HZB), (Germany). German Research Centre for Materials and Energy, Dept. of Structure and Dynamics of Energy Materials
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Inst. Minoru de Recherche Avancee (IMRA), Sophia Antipolis, Cedex (France)
- Humboldt Univ. of Berlin (Germany)
- Helmholtz-Zentrum Berlin (HZB), (Germany). German Research Centre for Materials and Energy, Inst. for Solar Fuels
- Publication Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE)
- OSTI Identifier:
- 1334597
- Report Number(s):
- NREL/JA-5J00-67507
Journal ID: ISSN 0021-8979; JAPIAU
- Grant/Contract Number:
- AC36-08GO28308
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 120; Journal Issue: 17; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; band gap; grain boundaries; hole mobility; hall mobility; solar cells
Citation Formats
Hempel, Hannes, Redinger, Alex, Repins, Ingrid, Moisan, Camille, Larramona, Gerardo, Dennler, Gilles, Handwerg, Martin, Fischer, Saskia F., Eichberger, Rainer, and Unold, Thomas. Intragrain charge transport in kesterite thin films—Limits arising from carrier localization. United States: N. p., 2016.
Web. doi:10.1063/1.4965868.
Hempel, Hannes, Redinger, Alex, Repins, Ingrid, Moisan, Camille, Larramona, Gerardo, Dennler, Gilles, Handwerg, Martin, Fischer, Saskia F., Eichberger, Rainer, & Unold, Thomas. Intragrain charge transport in kesterite thin films—Limits arising from carrier localization. United States. https://doi.org/10.1063/1.4965868
Hempel, Hannes, Redinger, Alex, Repins, Ingrid, Moisan, Camille, Larramona, Gerardo, Dennler, Gilles, Handwerg, Martin, Fischer, Saskia F., Eichberger, Rainer, and Unold, Thomas. Thu .
"Intragrain charge transport in kesterite thin films—Limits arising from carrier localization". United States. https://doi.org/10.1063/1.4965868. https://www.osti.gov/servlets/purl/1334597.
@article{osti_1334597,
title = {Intragrain charge transport in kesterite thin films—Limits arising from carrier localization},
author = {Hempel, Hannes and Redinger, Alex and Repins, Ingrid and Moisan, Camille and Larramona, Gerardo and Dennler, Gilles and Handwerg, Martin and Fischer, Saskia F. and Eichberger, Rainer and Unold, Thomas},
abstractNote = {Intragrain charge carrier mobilities measured by time-resolved terahertz spectroscopy in state of the art Cu2ZnSn(S,Se)4 kesterite thin films are found to increase from 32 to 140 cm2V-1s-1 with increasing Se content. The mobilities are limited by carrier localization on the nanometer-scale, which takes place within the first 2 ps after carrier excitation. The localization strength obtained from the Drude-Smith model is found to be independent of the excited photocarrier density. This is in accordance with bandgap fluctuations as a cause of the localized transport. Lastly, charge carrier localization is a general issue in the probed kesterite thin films, which were deposited by coevaporation, colloidal inks, and sputtering followed by annealing with varying Se/S contents and yield 4.9%-10.0% efficiency in the completed device.},
doi = {10.1063/1.4965868},
journal = {Journal of Applied Physics},
number = 17,
volume = 120,
place = {United States},
year = {2016},
month = {11}
}
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