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Title: Spectral filtering using active metasurfaces compatible with narrow bandgap III-V infrared detectors

Abstract

Narrow-bandgap semiconductors such as alloys of InAsAlSb and their heterostructures are considered promising candidates for next generation infrared photodetectors and devices. The prospect of actively tuning the spectral responsivity of these detectors at the pixel level is very appealing. In principle, this could be achieved with a tunable metasurface fabricated monolithically on the detector pixel. Here, we present first steps towards that goal using a complementary metasurface strongly coupled to an epsilon-near-zero (ENZ) mode operating in the long-wave region of the infrared spectrum. We fabricate such a coupled system using the same epitaxial layers used for infrared pixels in a focal plane array and demonstrate the existence of ENZ modes in high mobility layers of InAsSb. We confirm that the coupling strength between the ENZ mode and the metasurface depends on the ENZ layer thickness and demonstrate a transmission modulation on the order of 25%. Lastly, we further show numerically the expected tunable spectral behavior of such coupled system under reverse and forward bias, which could be used in future electrically tunable detectors.

Authors:
 [1];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1334377
Report Number(s):
SAND-2016-8444J
Journal ID: ISSN 1094-4087; OPEXFF; 646974
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Optics Express
Additional Journal Information:
Journal Volume: 24; Journal Issue: 19; Journal ID: ISSN 1094-4087
Publisher:
Optical Society of America (OSA)
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; 36 MATERIALS SCIENCE; metamaterials; optical properties; detectors

Citation Formats

Wolf, Omri, Campione, Salvatore, Kim, Jin, and Brener, Igal. Spectral filtering using active metasurfaces compatible with narrow bandgap III-V infrared detectors. United States: N. p., 2016. Web. https://doi.org/10.1364/OE.24.021512.
Wolf, Omri, Campione, Salvatore, Kim, Jin, & Brener, Igal. Spectral filtering using active metasurfaces compatible with narrow bandgap III-V infrared detectors. United States. https://doi.org/10.1364/OE.24.021512
Wolf, Omri, Campione, Salvatore, Kim, Jin, and Brener, Igal. Fri . "Spectral filtering using active metasurfaces compatible with narrow bandgap III-V infrared detectors". United States. https://doi.org/10.1364/OE.24.021512. https://www.osti.gov/servlets/purl/1334377.
@article{osti_1334377,
title = {Spectral filtering using active metasurfaces compatible with narrow bandgap III-V infrared detectors},
author = {Wolf, Omri and Campione, Salvatore and Kim, Jin and Brener, Igal},
abstractNote = {Narrow-bandgap semiconductors such as alloys of InAsAlSb and their heterostructures are considered promising candidates for next generation infrared photodetectors and devices. The prospect of actively tuning the spectral responsivity of these detectors at the pixel level is very appealing. In principle, this could be achieved with a tunable metasurface fabricated monolithically on the detector pixel. Here, we present first steps towards that goal using a complementary metasurface strongly coupled to an epsilon-near-zero (ENZ) mode operating in the long-wave region of the infrared spectrum. We fabricate such a coupled system using the same epitaxial layers used for infrared pixels in a focal plane array and demonstrate the existence of ENZ modes in high mobility layers of InAsSb. We confirm that the coupling strength between the ENZ mode and the metasurface depends on the ENZ layer thickness and demonstrate a transmission modulation on the order of 25%. Lastly, we further show numerically the expected tunable spectral behavior of such coupled system under reverse and forward bias, which could be used in future electrically tunable detectors.},
doi = {10.1364/OE.24.021512},
journal = {Optics Express},
number = 19,
volume = 24,
place = {United States},
year = {2016},
month = {1}
}

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