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Title: Superconducting gap structure in ambient-pressure-grown LaO 0.5 F 0.5 BiS 2

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Grant/Contract Number:
FG02-04ER46105
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 94 Journal Issue: 22; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1334359

Zhang, Jian, Huang, K., Ding, Z. F., MacLaughlin, D. E., Bernal, O. O., Ho, P. -C., Tan, C., Liu, X., Yazici, D., Maple, M. B., and Shu, Lei. Superconducting gap structure in ambient-pressure-grown LaO 0.5 F 0.5 BiS 2. United States: N. p., Web. doi:10.1103/PhysRevB.94.224502.
Zhang, Jian, Huang, K., Ding, Z. F., MacLaughlin, D. E., Bernal, O. O., Ho, P. -C., Tan, C., Liu, X., Yazici, D., Maple, M. B., & Shu, Lei. Superconducting gap structure in ambient-pressure-grown LaO 0.5 F 0.5 BiS 2. United States. doi:10.1103/PhysRevB.94.224502.
Zhang, Jian, Huang, K., Ding, Z. F., MacLaughlin, D. E., Bernal, O. O., Ho, P. -C., Tan, C., Liu, X., Yazici, D., Maple, M. B., and Shu, Lei. 2016. "Superconducting gap structure in ambient-pressure-grown LaO 0.5 F 0.5 BiS 2". United States. doi:10.1103/PhysRevB.94.224502.
@article{osti_1334359,
title = {Superconducting gap structure in ambient-pressure-grown LaO 0.5 F 0.5 BiS 2},
author = {Zhang, Jian and Huang, K. and Ding, Z. F. and MacLaughlin, D. E. and Bernal, O. O. and Ho, P. -C. and Tan, C. and Liu, X. and Yazici, D. and Maple, M. B. and Shu, Lei},
abstractNote = {},
doi = {10.1103/PhysRevB.94.224502},
journal = {Physical Review B},
number = 22,
volume = 94,
place = {United States},
year = {2016},
month = {12}
}