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Title: Spin coherence and dephasing of localized electrons in monolayer MoS 2

Here, we report a systematic study of coherent spin precession and spin dephasing in electron-doped monolayer MoS 2. Using time-resolved Kerr rotation spectroscopy and applied in-plane magnetic fields, a nanosecond time scale Larmor spin precession signal commensurate with g-factor |g 0| ≃ 1.86 is observed in several different MoS 2 samples grown by chemical vapor deposition. The dephasing rate of this oscillatory signal increases linearly with magnetic field, suggesting that the coherence arises from a subensemble of localized electron spins having an inhomogeneously broadened distribution of g-factors, g 0 + Δg. In contrast to g 0, Δg is sample-dependent and ranges from 0.042 to 0.115.
Authors:
 [1] ;  [2] ;  [3] ;  [3] ;  [2] ;  [1]
  1. National High Magnetic Field Lab., Los Alamos, NM (United States)
  2. Rice Univ., Houston, TX (United States)
  3. Naval Research Lab., Washington, D.C. (United States)
Publication Date:
Report Number(s):
LA-UR-15-28148
Journal ID: ISSN 1530-6984
Grant/Contract Number:
AC52-06NA25396
Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 15; Journal Issue: 12; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Research Org:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; high magnetic field science; 2D Semiconductor; dichalcogenide; monolayer MoS2; spin coherence
OSTI Identifier:
1334146