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Title: Ab initio electron mobility and polar phonon scattering in GaAs

Authors:
;
Publication Date:
Grant/Contract Number:
SC0004993; AC02-05CH11231
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 94 Journal Issue: 20; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1333582

Zhou, Jin-Jian, and Bernardi, Marco. Ab initio electron mobility and polar phonon scattering in GaAs. United States: N. p., Web. doi:10.1103/PhysRevB.94.201201.
Zhou, Jin-Jian, & Bernardi, Marco. Ab initio electron mobility and polar phonon scattering in GaAs. United States. doi:10.1103/PhysRevB.94.201201.
Zhou, Jin-Jian, and Bernardi, Marco. 2016. "Ab initio electron mobility and polar phonon scattering in GaAs". United States. doi:10.1103/PhysRevB.94.201201.
@article{osti_1333582,
title = {Ab initio electron mobility and polar phonon scattering in GaAs},
author = {Zhou, Jin-Jian and Bernardi, Marco},
abstractNote = {},
doi = {10.1103/PhysRevB.94.201201},
journal = {Physical Review B},
number = 20,
volume = 94,
place = {United States},
year = {2016},
month = {11}
}

Works referenced in this record:

Electrons in lattice fields
journal, July 1954

EPW: A program for calculating the electron–phonon coupling using maximally localized Wannier functions
journal, December 2010
  • Noffsinger, Jesse; Giustino, Feliciano; Malone, Brad D.
  • Computer Physics Communications, Vol. 181, Issue 12, p. 2140-2148
  • DOI: 10.1016/j.cpc.2010.08.027