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Title: Ab initio electron mobility and polar phonon scattering in GaAs

Publication Date:
Sponsoring Org.:
OSTI Identifier:
Grant/Contract Number:  
SC0004993; AC02-05CH11231
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 94 Journal Issue: 20; Journal ID: ISSN 2469-9950
American Physical Society
Country of Publication:
United States

Citation Formats

Zhou, Jin-Jian, and Bernardi, Marco. Ab initio electron mobility and polar phonon scattering in GaAs. United States: N. p., 2016. Web. doi:10.1103/PhysRevB.94.201201.
Zhou, Jin-Jian, & Bernardi, Marco. Ab initio electron mobility and polar phonon scattering in GaAs. United States. doi:10.1103/PhysRevB.94.201201.
Zhou, Jin-Jian, and Bernardi, Marco. Mon . "Ab initio electron mobility and polar phonon scattering in GaAs". United States. doi:10.1103/PhysRevB.94.201201.
title = {Ab initio electron mobility and polar phonon scattering in GaAs},
author = {Zhou, Jin-Jian and Bernardi, Marco},
abstractNote = {},
doi = {10.1103/PhysRevB.94.201201},
journal = {Physical Review B},
number = 20,
volume = 94,
place = {United States},
year = {2016},
month = {11}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.94.201201

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Cited by: 9 works
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