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Title: Room temperature negative differential resistance in terahertz quantum cascade laser structures

Abstract

The mechanisms that limit the temperature performance of GaAs/Al 0.15GaAs-based terahertz quantum cascade lasers (THz-QCLs) have been identified as thermally activated LO-phonon scattering and leakage of charge carriers into the continuum. Consequently, the combination of highly diagonal optical transition and higher barriers should significantly reduce the adverse effects of both mechanisms and lead to improved temperature performance. Here, we study the temperature performance of highly diagonal THz-QCLs with high barriers. Our analysis uncovers an additional leakage channel which is the thermal excitation of carriers into bounded higher energy levels, rather than the escape into the continuum. Based on this understanding, we have designed a structure with an increased intersubband spacing between the upper lasing level and excited states in a highly diagonal THz-QCL, which exhibits negative differential resistance even at room temperature. Furthermore, this result is a strong evidence for the effective suppression of the aforementioned leakage channel.

Authors:
ORCiD logo [1];  [1];  [2]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1333541
Report Number(s):
SAND-2016-6377J
Journal ID: ISSN 0003-6951; APPLAB; 643803
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 8; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 42 ENGINEERING; negative resistance; low temperature instruments; excited states; aluminum; high temperature instruments

Citation Formats

Albo, Asaf, Hu, Qing, and Reno, John L. Room temperature negative differential resistance in terahertz quantum cascade laser structures. United States: N. p., 2016. Web. doi:10.1063/1.4961617.
Albo, Asaf, Hu, Qing, & Reno, John L. Room temperature negative differential resistance in terahertz quantum cascade laser structures. United States. doi:10.1063/1.4961617.
Albo, Asaf, Hu, Qing, and Reno, John L. Wed . "Room temperature negative differential resistance in terahertz quantum cascade laser structures". United States. doi:10.1063/1.4961617. https://www.osti.gov/servlets/purl/1333541.
@article{osti_1333541,
title = {Room temperature negative differential resistance in terahertz quantum cascade laser structures},
author = {Albo, Asaf and Hu, Qing and Reno, John L.},
abstractNote = {The mechanisms that limit the temperature performance of GaAs/Al0.15GaAs-based terahertz quantum cascade lasers (THz-QCLs) have been identified as thermally activated LO-phonon scattering and leakage of charge carriers into the continuum. Consequently, the combination of highly diagonal optical transition and higher barriers should significantly reduce the adverse effects of both mechanisms and lead to improved temperature performance. Here, we study the temperature performance of highly diagonal THz-QCLs with high barriers. Our analysis uncovers an additional leakage channel which is the thermal excitation of carriers into bounded higher energy levels, rather than the escape into the continuum. Based on this understanding, we have designed a structure with an increased intersubband spacing between the upper lasing level and excited states in a highly diagonal THz-QCL, which exhibits negative differential resistance even at room temperature. Furthermore, this result is a strong evidence for the effective suppression of the aforementioned leakage channel.},
doi = {10.1063/1.4961617},
journal = {Applied Physics Letters},
number = 8,
volume = 109,
place = {United States},
year = {2016},
month = {8}
}

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Works referenced in this record:

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journal, March 2015

  • Albo, Asaf; Hu, Qing
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Threshold Current Density Reduction by Utilizing High-Al-Composition Barriers in 3.7 THz GaAs/Al$_{x}$Ga$_{1-x}$As Quantum Cascade Lasers
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journal, December 2015


Effects of interface roughness scattering on device performance of indirectly pumped terahertz quantum cascade lasers
journal, June 2015


    Works referencing / citing this record:

    Extraction-controlled terahertz frequency quantum cascade lasers with a diagonal LO-phonon extraction and injection stage
    journal, January 2016


    Extraction-controlled terahertz frequency quantum cascade lasers with a diagonal LO-phonon extraction and injection stage
    journal, January 2016