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Title: Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

Abstract

Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10 –3 Ω cm 2 and low voltage consumption below 1 V (at 1 kA/cm 2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.

Authors:
ORCiD logo [1];  [1];  [1];  [2];  [2];  [2];  [1]
  1. The Ohio State Univ., Columbus, OH (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1333538
Alternate Identifier(s):
OSTI ID: 1328480
Report Number(s):
SAND-2016-9079J
Journal ID: ISSN 0003-6951; APPLAB; 647379; TRN: US1700180
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 12; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; tunnel junctions; tunneling; III-V semiconductors; light emitting diodes; ultraviolet light

Citation Formats

Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., and Rajan, Siddharth. Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions. United States: N. p., 2016. Web. doi:10.1063/1.4962900.
Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., & Rajan, Siddharth. Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions. United States. doi:10.1063/1.4962900.
Zhang, Yuewei, Krishnamoorthy, Sriram, Akyol, Fatih, Allerman, Andrew A., Moseley, Michael W., Armstrong, Andrew M., and Rajan, Siddharth. Mon . "Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions". United States. doi:10.1063/1.4962900. https://www.osti.gov/servlets/purl/1333538.
@article{osti_1333538,
title = {Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions},
author = {Zhang, Yuewei and Krishnamoorthy, Sriram and Akyol, Fatih and Allerman, Andrew A. and Moseley, Michael W. and Armstrong, Andrew M. and Rajan, Siddharth},
abstractNote = {Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and the light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction >50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced three dimensional charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. In addition, the design of graded tunnel junction structures could lead to low tunneling resistance below 10–3 Ω cm2 and low voltage consumption below 1 V (at 1 kA/cm2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance and can enable efficient emitters in the UV-C wavelength range.},
doi = {10.1063/1.4962900},
journal = {Applied Physics Letters},
number = 12,
volume = 109,
place = {United States},
year = {2016},
month = {9}
}

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