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Title: Interface Structure, Band Alignment, and Built-In Potentials at LaFeO 3 / n SrTiO 3 Heterojunctions

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Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 117 Journal Issue: 22; Journal ID: ISSN 0031-9007
American Physical Society
Country of Publication:
United States

Citation Formats

Comes, Ryan, and Chambers, Scott. Interface Structure, Band Alignment, and Built-In Potentials at LaFeO 3 / n − SrTiO 3 Heterojunctions. United States: N. p., 2016. Web. doi:10.1103/PhysRevLett.117.226802.
Comes, Ryan, & Chambers, Scott. Interface Structure, Band Alignment, and Built-In Potentials at LaFeO 3 / n − SrTiO 3 Heterojunctions. United States. doi:10.1103/PhysRevLett.117.226802.
Comes, Ryan, and Chambers, Scott. Tue . "Interface Structure, Band Alignment, and Built-In Potentials at LaFeO 3 / n − SrTiO 3 Heterojunctions". United States. doi:10.1103/PhysRevLett.117.226802.
title = {Interface Structure, Band Alignment, and Built-In Potentials at LaFeO 3 / n − SrTiO 3 Heterojunctions},
author = {Comes, Ryan and Chambers, Scott},
abstractNote = {},
doi = {10.1103/PhysRevLett.117.226802},
journal = {Physical Review Letters},
number = 22,
volume = 117,
place = {United States},
year = {2016},
month = {11}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevLett.117.226802

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Cited by: 5 works
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