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Title: Phase degradation in B xGa 1–xN films grown at low temperature by metalorganic vapor phase epitaxy

Using metalorganic vapor phase epitaxy, a comprehensive study of B xGa 1-xN growth on GaN and AlN templates is described. BGaN growth at high-temperature and high-pressure results in rough surfaces and poor boron incorporation efficiency, while growth at low-temperature and low-pressure (750–900 °C and 20 Torr) using nitrogen carrier gas results in improved surface morphology and boron incorporation up to ~7.4% as determined by nuclear reaction analysis. However, further structural analysis by transmission electron microscopy and x-ray pole figures points to severe degradation of the high boron composition films, into a twinned cubic structure with a high density of stacking faults and little or no room temperature photoluminescence emission. Films with <1% triethylboron (TEB) flow show more intense, narrower x-ray diffraction peaks, near-band-edge photoluminescence emission at ~362 nm, and primarily wurtzite-phase structure in the x-ray pole figures. For films with >1% TEB flow, the crystal structure becomes dominated by the cubic phase. As a result, only when the TEB flow is zero (pure GaN), does the cubic phase entirely disappear from the x-ray pole figure, suggesting that under these growth conditions even very low boron compositions lead to mixed crystalline phases.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
SAND-2016-11244J
Journal ID: ISSN 0022-0248; PII: S0022024816306492; TRN: US1700123
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Name: Journal of Crystal Growth; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; nitrides; metalorganic vapor phase epitaxy; crystal structure; X-ray diffraction; characterization; defects
OSTI Identifier:
1332951
Alternate Identifier(s):
OSTI ID: 1416480

Gunning, Brendan P., Moseley, Michael W., Koleske, Daniel D., Allerman, Andrew A., and Lee, Stephen R.. Phase degradation in BxGa1–xN films grown at low temperature by metalorganic vapor phase epitaxy. United States: N. p., Web. doi:10.1016/j.jcrysgro.2016.10.054.
Gunning, Brendan P., Moseley, Michael W., Koleske, Daniel D., Allerman, Andrew A., & Lee, Stephen R.. Phase degradation in BxGa1–xN films grown at low temperature by metalorganic vapor phase epitaxy. United States. doi:10.1016/j.jcrysgro.2016.10.054.
Gunning, Brendan P., Moseley, Michael W., Koleske, Daniel D., Allerman, Andrew A., and Lee, Stephen R.. 2016. "Phase degradation in BxGa1–xN films grown at low temperature by metalorganic vapor phase epitaxy". United States. doi:10.1016/j.jcrysgro.2016.10.054. https://www.osti.gov/servlets/purl/1332951.
@article{osti_1332951,
title = {Phase degradation in BxGa1–xN films grown at low temperature by metalorganic vapor phase epitaxy},
author = {Gunning, Brendan P. and Moseley, Michael W. and Koleske, Daniel D. and Allerman, Andrew A. and Lee, Stephen R.},
abstractNote = {Using metalorganic vapor phase epitaxy, a comprehensive study of BxGa1-xN growth on GaN and AlN templates is described. BGaN growth at high-temperature and high-pressure results in rough surfaces and poor boron incorporation efficiency, while growth at low-temperature and low-pressure (750–900 °C and 20 Torr) using nitrogen carrier gas results in improved surface morphology and boron incorporation up to ~7.4% as determined by nuclear reaction analysis. However, further structural analysis by transmission electron microscopy and x-ray pole figures points to severe degradation of the high boron composition films, into a twinned cubic structure with a high density of stacking faults and little or no room temperature photoluminescence emission. Films with <1% triethylboron (TEB) flow show more intense, narrower x-ray diffraction peaks, near-band-edge photoluminescence emission at ~362 nm, and primarily wurtzite-phase structure in the x-ray pole figures. For films with >1% TEB flow, the crystal structure becomes dominated by the cubic phase. As a result, only when the TEB flow is zero (pure GaN), does the cubic phase entirely disappear from the x-ray pole figure, suggesting that under these growth conditions even very low boron compositions lead to mixed crystalline phases.},
doi = {10.1016/j.jcrysgro.2016.10.054},
journal = {Journal of Crystal Growth},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {11}
}