Integrating carbon nanotube forests into polysilicon MEMS: Growth kinetics, mechanisms, and adhesion
Abstract
The growth of carbon nanotubes (CNTs) on polycrystalline silicon substrates was studied to improve the design of CNT field emission sources for microelectromechanical systems (MEMS) applications and vacuum microelectronic devices (VMDs). Microwave plasma-enhanced chemical vapor deposition (PECVD) was used for CNT growth, resulting in CNTs that incorporate the catalyst particle at their base. The kinetics of CNT growth on polysilicon were compared to growth on Si (100) using the model of Deal and Grove, finding activation energies of 1.61 and 1.54 eV for the nucleation phase of growth and 1.90 and 3.69 eV for the diffusion-limited phase on Si (100) and polysilicon, respectively. Diffusivity values for growth on polysilicon were notably lower than the corresponding values on Si (100) and the growth process became diffusion-limited earlier. Evidence favors a surface diffusion growth mechanism involving diffusion of carbon precursor species along the length of the CNT forest to the catalyst at the base. Explanations for the differences in activation energies and diffusivities were elucidated by SEM analysis of the catalyst nanoparticle arrays and through wide-angle X-ray scattering (WAXS) of CNT forests. As a result, methods are presented to improve adhesion of CNT films during operation as field emitters, resulting in amore »
- Authors:
-
- Duke Univ., Durham, NC (United States)
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Research Triangle Institute (RTI) International, Durham, NC (United States)
- Publication Date:
- Research Org.:
- Duke Univ., Durham, NC (United States)
- Sponsoring Org.:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1332934
- Alternate Identifier(s):
- OSTI ID: 1398682
- Grant/Contract Number:
- AR0000546; AC52-07NA27344
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Carbon
- Additional Journal Information:
- Journal Name: Carbon; Journal ID: ISSN 0008-6223
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE
Citation Formats
Ubnoske, Stephen M., Radauscher, Erich J., Meshot, Eric R., Stoner, Brian R., Parker, Charles B., and Glass, Jeffrey T. Integrating carbon nanotube forests into polysilicon MEMS: Growth kinetics, mechanisms, and adhesion. United States: N. p., 2016.
Web. doi:10.1016/j.carbon.2016.11.047.
Ubnoske, Stephen M., Radauscher, Erich J., Meshot, Eric R., Stoner, Brian R., Parker, Charles B., & Glass, Jeffrey T. Integrating carbon nanotube forests into polysilicon MEMS: Growth kinetics, mechanisms, and adhesion. United States. https://doi.org/10.1016/j.carbon.2016.11.047
Ubnoske, Stephen M., Radauscher, Erich J., Meshot, Eric R., Stoner, Brian R., Parker, Charles B., and Glass, Jeffrey T. Sat .
"Integrating carbon nanotube forests into polysilicon MEMS: Growth kinetics, mechanisms, and adhesion". United States. https://doi.org/10.1016/j.carbon.2016.11.047. https://www.osti.gov/servlets/purl/1332934.
@article{osti_1332934,
title = {Integrating carbon nanotube forests into polysilicon MEMS: Growth kinetics, mechanisms, and adhesion},
author = {Ubnoske, Stephen M. and Radauscher, Erich J. and Meshot, Eric R. and Stoner, Brian R. and Parker, Charles B. and Glass, Jeffrey T.},
abstractNote = {The growth of carbon nanotubes (CNTs) on polycrystalline silicon substrates was studied to improve the design of CNT field emission sources for microelectromechanical systems (MEMS) applications and vacuum microelectronic devices (VMDs). Microwave plasma-enhanced chemical vapor deposition (PECVD) was used for CNT growth, resulting in CNTs that incorporate the catalyst particle at their base. The kinetics of CNT growth on polysilicon were compared to growth on Si (100) using the model of Deal and Grove, finding activation energies of 1.61 and 1.54 eV for the nucleation phase of growth and 1.90 and 3.69 eV for the diffusion-limited phase on Si (100) and polysilicon, respectively. Diffusivity values for growth on polysilicon were notably lower than the corresponding values on Si (100) and the growth process became diffusion-limited earlier. Evidence favors a surface diffusion growth mechanism involving diffusion of carbon precursor species along the length of the CNT forest to the catalyst at the base. Explanations for the differences in activation energies and diffusivities were elucidated by SEM analysis of the catalyst nanoparticle arrays and through wide-angle X-ray scattering (WAXS) of CNT forests. As a result, methods are presented to improve adhesion of CNT films during operation as field emitters, resulting in a 2.5× improvement.},
doi = {10.1016/j.carbon.2016.11.047},
journal = {Carbon},
number = ,
volume = ,
place = {United States},
year = {Sat Nov 19 00:00:00 EST 2016},
month = {Sat Nov 19 00:00:00 EST 2016}
}
Web of Science
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