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Title: Substrate-supported large-band-gap quantum spin Hall insulator based on III-V bismuth layers

Authors:
; ; ;
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 94 Journal Issue: 19; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1332385

Padilha, J. E., Janotti, A., Fazzio, A., and da Silva, A. J. R.. Substrate-supported large-band-gap quantum spin Hall insulator based on III-V bismuth layers. United States: N. p., Web. doi:10.1103/PhysRevB.94.195424.
Padilha, J. E., Janotti, A., Fazzio, A., & da Silva, A. J. R.. Substrate-supported large-band-gap quantum spin Hall insulator based on III-V bismuth layers. United States. doi:10.1103/PhysRevB.94.195424.
Padilha, J. E., Janotti, A., Fazzio, A., and da Silva, A. J. R.. 2016. "Substrate-supported large-band-gap quantum spin Hall insulator based on III-V bismuth layers". United States. doi:10.1103/PhysRevB.94.195424.
@article{osti_1332385,
title = {Substrate-supported large-band-gap quantum spin Hall insulator based on III-V bismuth layers},
author = {Padilha, J. E. and Janotti, A. and Fazzio, A. and da Silva, A. J. R.},
abstractNote = {},
doi = {10.1103/PhysRevB.94.195424},
journal = {Physical Review B},
number = 19,
volume = 94,
place = {United States},
year = {2016},
month = {11}
}

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