Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control
- Authors:
-
[1];
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919, USA, Adroit Materials, Inc., 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919, USA
- Adroit Materials, Inc., 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA
- Engineering Science Directorate, Army Research Office, P.O. BOX 12211, Research Triangle Park, North Carolina 27703, USA
- Publication Date:
- Sponsoring Org.:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- OSTI Identifier:
- 1332017
- Grant/Contract Number:
- AR0000299
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Name: Journal of Applied Physics Journal Volume: 120 Journal Issue: 18; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Reddy, P., Hoffmann, M. P., Kaess, F., Bryan, Z., Bryan, I., Bobea, M., Klump, A., Tweedie, J., Kirste, R., Mita, S., Gerhold, M., Collazo, R., and Sitar, Z. Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control. United States: N. p., 2016.
Web. doi:10.1063/1.4967397.
Reddy, P., Hoffmann, M. P., Kaess, F., Bryan, Z., Bryan, I., Bobea, M., Klump, A., Tweedie, J., Kirste, R., Mita, S., Gerhold, M., Collazo, R., & Sitar, Z. Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control. United States. https://doi.org/10.1063/1.4967397
Reddy, P., Hoffmann, M. P., Kaess, F., Bryan, Z., Bryan, I., Bobea, M., Klump, A., Tweedie, J., Kirste, R., Mita, S., Gerhold, M., Collazo, R., and Sitar, Z. Mon .
"Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control". United States. https://doi.org/10.1063/1.4967397.
@article{osti_1332017,
title = {Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control},
author = {Reddy, P. and Hoffmann, M. P. and Kaess, F. and Bryan, Z. and Bryan, I. and Bobea, M. and Klump, A. and Tweedie, J. and Kirste, R. and Mita, S. and Gerhold, M. and Collazo, R. and Sitar, Z.},
abstractNote = {},
doi = {10.1063/1.4967397},
journal = {Journal of Applied Physics},
number = 18,
volume = 120,
place = {United States},
year = {Mon Nov 14 00:00:00 EST 2016},
month = {Mon Nov 14 00:00:00 EST 2016}
}
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https://doi.org/10.1063/1.4967397
https://doi.org/10.1063/1.4967397
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Works referenced in this record:
Fermi Level Control of Point Defects During Growth of Mg-Doped GaN
journal, December 2012
- Bryan, Zachary; Hoffmann, Marc; Tweedie, James
- Journal of Electronic Materials, Vol. 42, Issue 5
First-principles calculations for defects and impurities: Applications to III-nitrides
journal, April 2004
- Van de Walle, Chris G.; Neugebauer, Jörg
- Journal of Applied Physics, Vol. 95, Issue 8
Charge neutrality levels, barrier heights, and band offsets at polar AlGaN
journal, August 2015
- Reddy, Pramod; Bryan, Isaac; Bryan, Zachary
- Applied Physics Letters, Vol. 107, Issue 9
Effects of deep level defects in semiconductor detectors
journal, August 1996
- Lutz, G.
- Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 377, Issue 2-3
Laser Conditions in Semiconductors
journal, January 1961
- Bernard, Maurice G. A.; Duraffourg, Georges
- physica status solidi (b), Vol. 1, Issue 7
Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects
journal, May 2006
- Chichibu, S. F.; Onuma, T.; Kubota, M.
- Journal of Applied Physics, Vol. 99, Issue 9
Yellow Luminescence of Gallium Nitride Generated by Carbon Defect Complexes
journal, February 2013
- Demchenko, D. O.; Diallo, I. C.; Reshchikov, M. A.
- Physical Review Letters, Vol. 110, Issue 8
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
journal, December 2014
- Bryan, Zachary; Bryan, Isaac; Gaddy, Benjamin E.
- Applied Physics Letters, Vol. 105, Issue 22
Highly conductive n-Al x Ga 1− x N layers with aluminum mole fractions above 80%
journal, November 2013
- Mehnke, Frank; Wernicke, Tim; Pingel, Harald
- Applied Physics Letters, Vol. 103, Issue 21
Carbon impurities and the yellow luminescence in GaN
journal, October 2010
- Lyons, J. L.; Janotti, A.; Van de Walle, C. G.
- Applied Physics Letters, Vol. 97, Issue 15
Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals
journal, January 2015
- Buckeridge, J.; Catlow, C. R. A.; Scanlon, D. O.
- Physical Review Letters, Vol. 114, Issue 1
Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition
journal, July 2008
- Mita, S.; Collazo, R.; Rice, A.
- Journal of Applied Physics, Vol. 104, Issue 1
Schottky contact formation on polar and non-polar AlN
journal, November 2014
- Reddy, Pramod; Bryan, Isaac; Bryan, Zachary
- Journal of Applied Physics, Vol. 116, Issue 19
Point defect management in GaN by Fermi-level control during growth
conference, March 2014
- Hoffmann, Marc P.; Tweedie, James; Kirste, Ronny
- SPIE OPTO, SPIE Proceedings
Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements
journal, March 2013
- Kirste, Ronny; Hoffmann, Marc P.; Tweedie, James
- Journal of Applied Physics, Vol. 113, Issue 10
Origins of optical absorption and emission lines in AlN
journal, September 2014
- Yan, Qimin; Janotti, Anderson; Scheffler, Matthias
- Applied Physics Letters, Vol. 105, Issue 11
Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
journal, November 1997
- Muth, J. F.; Lee, J. H.; Shmagin, I. K.
- Applied Physics Letters, Vol. 71, Issue 18
Luminescence properties of defects in GaN
journal, March 2005
- Reshchikov, Michael A.; Morkoç, Hadis
- Journal of Applied Physics, Vol. 97, Issue 6
First-principles study of native point defects in ZnO
journal, June 2000
- Kohan, A. F.; Ceder, G.; Morgan, D.
- Physical Review B, Vol. 61, Issue 22
Free-carrier mobility in GaN in the presence of dislocation walls
journal, February 2001
- Farvacque, J. -L.; Bougrioua, Z.; Moerman, I.
- Physical Review B, Vol. 63, Issue 11
Impact of carbon on trap states in n -type GaN grown by metalorganic chemical vapor deposition
journal, January 2004
- Armstrong, A.; Arehart, A. R.; Moran, B.
- Applied Physics Letters, Vol. 84, Issue 3
The effect of polarity and surface states on the Fermi level at III-nitride surfaces
journal, September 2014
- Reddy, Pramod; Bryan, Isaac; Bryan, Zachary
- Journal of Applied Physics, Vol. 116, Issue 12
Doping asymmetry in wide-bandgap semiconductors: Origins and solutions
journal, April 2008
- Yan, Yanfa; Wei, Su-Huai
- physica status solidi (b), Vol. 245, Issue 4
Optical signature of Mg-doped GaN: Transfer processes
journal, August 2012
- Callsen, G.; Wagner, M. R.; Kure, T.
- Physical Review B, Vol. 86, Issue 7
Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications
journal, May 2011
- Collazo, Ramón; Mita, Seiji; Xie, Jinqiao
- physica status solidi (c), Vol. 8, Issue 7-8