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Title: Chemical vapor deposition of high-quality large-sized MoS2 crystals on silicon dioxide substrates

Abstract

Large-sized MoS2 crystals can be grown on SiO2/Si substrates via a two-stage chemical vapor deposition method. The maximum size of MoS2 crystals can be up to about 305 μm. The growth method can be used to grow other transition metal dichalcogenide crystals and lateral heterojunctions. Additionally, the electron mobility of the MoS2 crystals can reach ≈30 cm2 V–1 s–1, which is comparable to those of exfoliated flakes.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2];  [2];  [3];  [1]
  1. National Univ. of Singapore (Singapore)
  2. Ulsan National Institute of Science and Technology (UNIST), Ulsan (Republic of Korea)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1331100
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Advanced Science
Additional Journal Information:
Journal Volume: 3; Journal Issue: 8; Journal ID: ISSN 2198-3844
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Chen, Jianyi, Tang, Wei, Tian, Bingbing, Liu, Bo, Zhao, Xiaoxu, Liu, Yanpeng, Ren, Tianhua, Liu, Wei, Geng, Dechao, Jeong, Hu Young, Shin, Hyeon Suk, Zhou, Wu, and Loh, Kian Ping. Chemical vapor deposition of high-quality large-sized MoS2 crystals on silicon dioxide substrates. United States: N. p., 2016. Web. doi:10.1002/advs.201600033.
Chen, Jianyi, Tang, Wei, Tian, Bingbing, Liu, Bo, Zhao, Xiaoxu, Liu, Yanpeng, Ren, Tianhua, Liu, Wei, Geng, Dechao, Jeong, Hu Young, Shin, Hyeon Suk, Zhou, Wu, & Loh, Kian Ping. Chemical vapor deposition of high-quality large-sized MoS2 crystals on silicon dioxide substrates. United States. doi:10.1002/advs.201600033.
Chen, Jianyi, Tang, Wei, Tian, Bingbing, Liu, Bo, Zhao, Xiaoxu, Liu, Yanpeng, Ren, Tianhua, Liu, Wei, Geng, Dechao, Jeong, Hu Young, Shin, Hyeon Suk, Zhou, Wu, and Loh, Kian Ping. Thu . "Chemical vapor deposition of high-quality large-sized MoS2 crystals on silicon dioxide substrates". United States. doi:10.1002/advs.201600033. https://www.osti.gov/servlets/purl/1331100.
@article{osti_1331100,
title = {Chemical vapor deposition of high-quality large-sized MoS2 crystals on silicon dioxide substrates},
author = {Chen, Jianyi and Tang, Wei and Tian, Bingbing and Liu, Bo and Zhao, Xiaoxu and Liu, Yanpeng and Ren, Tianhua and Liu, Wei and Geng, Dechao and Jeong, Hu Young and Shin, Hyeon Suk and Zhou, Wu and Loh, Kian Ping},
abstractNote = {Large-sized MoS2 crystals can be grown on SiO2/Si substrates via a two-stage chemical vapor deposition method. The maximum size of MoS2 crystals can be up to about 305 μm. The growth method can be used to grow other transition metal dichalcogenide crystals and lateral heterojunctions. Additionally, the electron mobility of the MoS2 crystals can reach ≈30 cm2 V–1 s–1, which is comparable to those of exfoliated flakes.},
doi = {10.1002/advs.201600033},
journal = {Advanced Science},
number = 8,
volume = 3,
place = {United States},
year = {2016},
month = {3}
}

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Cited by: 8 works
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