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Title: Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe

CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 10 16 cm -3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P) in a Cd-rich ambient, lifetimes of 30 ns with 10 16 cm -3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl 2 or Cu. Furthermore, phosphorus doping appears to be thermally stable. In conclusion, this combination of long lifetime, high carrier concentration, and improved stability can help overcome historic barriers for CdTe solar cell development.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ; ORCiD logo [1] ;  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Report Number(s):
NREL/JA-5K00-66107
Journal ID: ISSN 2166-532X; AMPADS
Grant/Contract Number:
AC36-08GO28308; AC36-08-GO28308
Type:
Published Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Volume: 4; Journal Issue: 11; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics (AIP)
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; hole density; doping; II-VI semiconductors; photoluminescence; sodium
OSTI Identifier:
1330596
Alternate Identifier(s):
OSTI ID: 1332487; OSTI ID: 1421266

Burst, James M., Farrell, Stuart B., Albin, David S., Colegrove, Eric, Reese, Matthew O., Duenow, Joel N., Kuciauskas, Darius, and Metzger, Wyatt K.. Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe. United States: N. p., Web. doi:10.1063/1.4966209.
Burst, James M., Farrell, Stuart B., Albin, David S., Colegrove, Eric, Reese, Matthew O., Duenow, Joel N., Kuciauskas, Darius, & Metzger, Wyatt K.. Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe. United States. doi:10.1063/1.4966209.
Burst, James M., Farrell, Stuart B., Albin, David S., Colegrove, Eric, Reese, Matthew O., Duenow, Joel N., Kuciauskas, Darius, and Metzger, Wyatt K.. 2016. "Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe". United States. doi:10.1063/1.4966209.
@article{osti_1330596,
title = {Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe},
author = {Burst, James M. and Farrell, Stuart B. and Albin, David S. and Colegrove, Eric and Reese, Matthew O. and Duenow, Joel N. and Kuciauskas, Darius and Metzger, Wyatt K.},
abstractNote = {CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 1016 cm-3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P) in a Cd-rich ambient, lifetimes of 30 ns with 1016 cm-3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl2 or Cu. Furthermore, phosphorus doping appears to be thermally stable. In conclusion, this combination of long lifetime, high carrier concentration, and improved stability can help overcome historic barriers for CdTe solar cell development.},
doi = {10.1063/1.4966209},
journal = {APL Materials},
number = 11,
volume = 4,
place = {United States},
year = {2016},
month = {11}
}

Works referenced in this record:

Time-resolved photoluminescence studies of CdTe solar cells
journal, September 2003
  • Metzger, W. K.; Albin, D.; Levi, D.
  • Journal of Applied Physics, Vol. 94, Issue 5, p. 3549-3555
  • DOI: 10.1063/1.1597974

Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations
journal, August 2013

Dependence of carrier lifetime on Cu-contacting temperature and ZnTe:Cu thickness in CdS/CdTe thin film solar cells
journal, February 2009