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Title: Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe

Abstract

CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 1016 cm-3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P) in a Cd-rich ambient, lifetimes of 30 ns with 1016 cm-3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl2 or Cu. Furthermore, phosphorus doping appears to be thermally stable. In conclusion, this combination of long lifetime, high carrier concentration, and improved stability can help overcome historic barriers for CdTe solar cell development.

Authors:
; ; ; ; ; ; ORCiD logo;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1330596
Alternate Identifier(s):
OSTI ID: 1332487; OSTI ID: 1421266
Report Number(s):
NREL/JA-5K00-66107
Journal ID: ISSN 2166-532X
Grant/Contract Number:  
AC36-08-GO28308; AC36-08GO28308
Resource Type:
Published Article
Journal Name:
APL Materials
Additional Journal Information:
Journal Name: APL Materials Journal Volume: 4 Journal Issue: 11; Journal ID: ISSN 2166-532X
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; hole density; doping; II-VI semiconductors; photoluminescence; sodium

Citation Formats

Burst, James M., Farrell, Stuart B., Albin, David S., Colegrove, Eric, Reese, Matthew O., Duenow, Joel N., Kuciauskas, Darius, and Metzger, Wyatt K. Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe. United States: N. p., 2016. Web. doi:10.1063/1.4966209.
Burst, James M., Farrell, Stuart B., Albin, David S., Colegrove, Eric, Reese, Matthew O., Duenow, Joel N., Kuciauskas, Darius, & Metzger, Wyatt K. Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe. United States. doi:10.1063/1.4966209.
Burst, James M., Farrell, Stuart B., Albin, David S., Colegrove, Eric, Reese, Matthew O., Duenow, Joel N., Kuciauskas, Darius, and Metzger, Wyatt K. Tue . "Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe". United States. doi:10.1063/1.4966209.
@article{osti_1330596,
title = {Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe},
author = {Burst, James M. and Farrell, Stuart B. and Albin, David S. and Colegrove, Eric and Reese, Matthew O. and Duenow, Joel N. and Kuciauskas, Darius and Metzger, Wyatt K.},
abstractNote = {CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 1016 cm-3, but compromise lifetime and stability. By post-deposition incorporation of a Group V dopant (P) in a Cd-rich ambient, lifetimes of 30 ns with 1016 cm-3 hole density are achieved in single-crystal and polycrystalline CdTe without CdCl2 or Cu. Furthermore, phosphorus doping appears to be thermally stable. In conclusion, this combination of long lifetime, high carrier concentration, and improved stability can help overcome historic barriers for CdTe solar cell development.},
doi = {10.1063/1.4966209},
journal = {APL Materials},
number = 11,
volume = 4,
place = {United States},
year = {2016},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4966209

Citation Metrics:
Cited by: 5 works
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    Works referencing / citing this record:

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