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Title: Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy

Abstract

Recently, theorists have predicted many materials with a low magnetic moment and large spin-polarization for spintronic applications. These compounds are predicted to form in the inverse Heusler structure; however, many of these compounds have been found to phase segregate. In this study, ordered Cr2CoGa thin films were synthesized without phase segregation using molecular beam epitaxy. The present as-grown films exhibit a low magnetic moment from antiferromagnetically coupled Cr and Co atoms as measured with superconducting quantum interface device magnetometry and soft X-ray magnetic circular dichroism. Electrical measurements demonstrated a thermally-activated semiconductor-like resistivity component with an activation energy of 87 meV. Finally, these results confirm spin gapless semiconducting behavior, which makes these thin films well positioned for future devices.

Authors:
ORCiD logo [1];  [2];  [3]; ORCiD logo [3];  [3];  [3]
  1. National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States). Center for Neutron Research; Northeastern Univ., Boston, MA (United States). Dept. of Physics
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
  3. Northeastern Univ., Boston, MA (United States). Dept. of Physics
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
OSTI Identifier:
1377595
Alternate Identifier(s):
OSTI ID: 1330592
Grant/Contract Number:  
AC02-06CH11357; AC02-98CH10886; ECCS-1402738
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 18; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Magnetic moments; Magnetic films; X-ray diffraction; Phase segregation; Magnetic annealing

Citation Formats

Jamer, Michelle E., Sterbinsky, George E., Stephen, Gregory M., DeCapua, Matthew C., Player, Gabriel, and Heiman, Don. Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy. United States: N. p., 2016. Web. doi:10.1063/1.4966634.
Jamer, Michelle E., Sterbinsky, George E., Stephen, Gregory M., DeCapua, Matthew C., Player, Gabriel, & Heiman, Don. Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy. United States. https://doi.org/10.1063/1.4966634
Jamer, Michelle E., Sterbinsky, George E., Stephen, Gregory M., DeCapua, Matthew C., Player, Gabriel, and Heiman, Don. Mon . "Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy". United States. https://doi.org/10.1063/1.4966634. https://www.osti.gov/servlets/purl/1377595.
@article{osti_1377595,
title = {Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy},
author = {Jamer, Michelle E. and Sterbinsky, George E. and Stephen, Gregory M. and DeCapua, Matthew C. and Player, Gabriel and Heiman, Don},
abstractNote = {Recently, theorists have predicted many materials with a low magnetic moment and large spin-polarization for spintronic applications. These compounds are predicted to form in the inverse Heusler structure; however, many of these compounds have been found to phase segregate. In this study, ordered Cr2CoGa thin films were synthesized without phase segregation using molecular beam epitaxy. The present as-grown films exhibit a low magnetic moment from antiferromagnetically coupled Cr and Co atoms as measured with superconducting quantum interface device magnetometry and soft X-ray magnetic circular dichroism. Electrical measurements demonstrated a thermally-activated semiconductor-like resistivity component with an activation energy of 87 meV. Finally, these results confirm spin gapless semiconducting behavior, which makes these thin films well positioned for future devices.},
doi = {10.1063/1.4966634},
journal = {Applied Physics Letters},
number = 18,
volume = 109,
place = {United States},
year = {Mon Oct 31 00:00:00 EDT 2016},
month = {Mon Oct 31 00:00:00 EDT 2016}
}

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Cited by: 16 works
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