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Title: Improved photoswitching response times of MoS2 field-effect transistors by stacking p-type copper phthalocyanine layer

Authors:
 [1] ;  [1] ;  [1] ;  [2] ; ORCiD logo [2] ;  [1] ;  [1] ;  [1] ;  [2] ;  [1]
  1. Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, South Korea
  2. Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 18; Related Information: CHORUS Timestamp: 2018-03-09 11:16:09; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1330591