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Title: Improved photoswitching response times of MoS2 field-effect transistors by stacking p-type copper phthalocyanine layer

Authors:
 [1] ;  [1] ;  [1] ;  [2] ; ORCiD logo [2] ;  [1] ;  [1] ;  [1] ;  [2] ;  [1]
  1. Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, South Korea
  2. Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 109 Journal Issue: 18; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1330591

Pak, Jinsu, Min, Misook, Cho, Kyungjune, Lien, Der-Hsien, Ahn, Geun Ho, Jang, Jingon, Yoo, Daekyoung, Chung, Seungjun, Javey, Ali, and Lee, Takhee. Improved photoswitching response times of MoS2 field-effect transistors by stacking p-type copper phthalocyanine layer. United States: N. p., Web. doi:10.1063/1.4966668.
Pak, Jinsu, Min, Misook, Cho, Kyungjune, Lien, Der-Hsien, Ahn, Geun Ho, Jang, Jingon, Yoo, Daekyoung, Chung, Seungjun, Javey, Ali, & Lee, Takhee. Improved photoswitching response times of MoS2 field-effect transistors by stacking p-type copper phthalocyanine layer. United States. doi:10.1063/1.4966668.
Pak, Jinsu, Min, Misook, Cho, Kyungjune, Lien, Der-Hsien, Ahn, Geun Ho, Jang, Jingon, Yoo, Daekyoung, Chung, Seungjun, Javey, Ali, and Lee, Takhee. 2016. "Improved photoswitching response times of MoS2 field-effect transistors by stacking p-type copper phthalocyanine layer". United States. doi:10.1063/1.4966668.
@article{osti_1330591,
title = {Improved photoswitching response times of MoS2 field-effect transistors by stacking p-type copper phthalocyanine layer},
author = {Pak, Jinsu and Min, Misook and Cho, Kyungjune and Lien, Der-Hsien and Ahn, Geun Ho and Jang, Jingon and Yoo, Daekyoung and Chung, Seungjun and Javey, Ali and Lee, Takhee},
abstractNote = {},
doi = {10.1063/1.4966668},
journal = {Applied Physics Letters},
number = 18,
volume = 109,
place = {United States},
year = {2016},
month = {10}
}

Works referenced in this record:

Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions
journal, September 2014
  • Duan, Xidong; Wang, Chen; Shaw, Jonathan C.
  • Nature Nanotechnology, Vol. 9, Issue 12, p. 1024-1030
  • DOI: 10.1038/nnano.2014.222

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010

Integrated Circuits Based on Bilayer MoS2 Transistors
journal, January 2012
  • Wang, Han; Yu, Lili; Lee, Yi-Hsien
  • Nano Letters, Vol. 12, Issue 9, p. 4674-4680
  • DOI: 10.1021/nl302015v

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
journal, November 2012
  • Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras
  • Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712
  • DOI: 10.1038/nnano.2012.193

Single-layer MoS2 transistors
journal, January 2011
  • Radisavljevic, B.; Radenovic, A.; Brivio, J.
  • Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
  • DOI: 10.1038/nnano.2010.279