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Title: Oxygen vacancy-driven evolution of structural and electrical properties in SrFeO 3₋δ thin films and a method of stabilization

Epitaxial SrFeO 3-δ (SFO) thin films have been grown on various substrates by pulsed laser deposition. The structural and electrical properties of SFO thin films are monitored with time in different atmospheres at room temperature, showing time-dependent crystal structure and electrical conductivity. The increased out-of-plane lattice parameter and resistivity over time are associated with the increased oxygen vacancies density in SFO thin films. The epitaxial strain plays an important role in determining the initial resistivity, and the sample environment determines the trend of resistivity change over time. An amorphous Al 2O 3 passivation layer has been found to be effective in stabilizing the structure and electrical properties of SFO thin films. Lastly, this work explores time dependent structure and properties variation in oxide films and provides a way to stabilize thin film materials that are sensitive to oxygen vacancies.
Authors:
ORCiD logo [1] ; ORCiD logo [1] ;  [2] ;  [1] ;  [1] ;  [1] ; ORCiD logo [1] ;  [3] ;  [4]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Univ. of Texas at San Antonio, San Antonio, TX (United States)
  3. Univ. of Texas at San Antonio, San Antonio, TX (United States)
  4. Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Univ. at Buffalo, State Univ. of New York, Buffalo, NY (United States)
Publication Date:
Report Number(s):
LA-UR-16-26035
Journal ID: ISSN 0003-6951; APPLAB
Grant/Contract Number:
AC52-06NA25396
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 14; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org:
USDOE Laboratory Directed Research and Development (LDRD) Program
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Material Science; Thin Films, multifunctional oxides, pulsed laser deposition
OSTI Identifier:
1330086
Alternate Identifier(s):
OSTI ID: 1328136

Enriquez, Erik M., Chen, Aiping, Harrell, Zachary John, Lu, Xujie, Dowden, Paul Charles, Koskelo, Nicholas Aaron, Janoschek, Marc, Chen, Chonglin, and Jia, Quanxi. Oxygen vacancy-driven evolution of structural and electrical properties in SrFeO3₋δ thin films and a method of stabilization. United States: N. p., Web. doi:10.1063/1.4964384.
Enriquez, Erik M., Chen, Aiping, Harrell, Zachary John, Lu, Xujie, Dowden, Paul Charles, Koskelo, Nicholas Aaron, Janoschek, Marc, Chen, Chonglin, & Jia, Quanxi. Oxygen vacancy-driven evolution of structural and electrical properties in SrFeO3₋δ thin films and a method of stabilization. United States. doi:10.1063/1.4964384.
Enriquez, Erik M., Chen, Aiping, Harrell, Zachary John, Lu, Xujie, Dowden, Paul Charles, Koskelo, Nicholas Aaron, Janoschek, Marc, Chen, Chonglin, and Jia, Quanxi. 2016. "Oxygen vacancy-driven evolution of structural and electrical properties in SrFeO3₋δ thin films and a method of stabilization". United States. doi:10.1063/1.4964384. https://www.osti.gov/servlets/purl/1330086.
@article{osti_1330086,
title = {Oxygen vacancy-driven evolution of structural and electrical properties in SrFeO3₋δ thin films and a method of stabilization},
author = {Enriquez, Erik M. and Chen, Aiping and Harrell, Zachary John and Lu, Xujie and Dowden, Paul Charles and Koskelo, Nicholas Aaron and Janoschek, Marc and Chen, Chonglin and Jia, Quanxi},
abstractNote = {Epitaxial SrFeO3-δ (SFO) thin films have been grown on various substrates by pulsed laser deposition. The structural and electrical properties of SFO thin films are monitored with time in different atmospheres at room temperature, showing time-dependent crystal structure and electrical conductivity. The increased out-of-plane lattice parameter and resistivity over time are associated with the increased oxygen vacancies density in SFO thin films. The epitaxial strain plays an important role in determining the initial resistivity, and the sample environment determines the trend of resistivity change over time. An amorphous Al2O3 passivation layer has been found to be effective in stabilizing the structure and electrical properties of SFO thin films. Lastly, this work explores time dependent structure and properties variation in oxide films and provides a way to stabilize thin film materials that are sensitive to oxygen vacancies.},
doi = {10.1063/1.4964384},
journal = {Applied Physics Letters},
number = 14,
volume = 109,
place = {United States},
year = {2016},
month = {10}
}

Works referenced in this record:

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