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Title: Realization of GaInP/Si dual-junction solar cells with 29.8% 1-sun efficiency

Combining a Si solar cell with a high-bandgap top cell reduces the thermalization losses in the short wavelength and enables theoretical 1-sun efficiencies far over 30%. We have investigated the fabrication and optimization of Si-based tandem solar cells with 1.8-eV rear-heterojunction GaInP top cells. The III-V and Si heterojunction subcells were fabricated separately and joined by mechanical stacking using electrically insulating optically transparent interlayers. Our GaInP/Si dual-junction solar cells have achieved a certified cumulative 1-sun efficiency of 29.8% ± 0.6% (AM1.5g) in four-terminal operation conditions, which exceeds the record 1-sun efficiencies achieved with both III-V and Si single-junction solar cells. Furthermore, the effect of luminescent coupling between the subcells has been investigated, and optical losses in the solar cell structure have been addressed.
Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [2] ;  [1] ;  [2] ;  [1] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [1] ;  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Swiss Center for Electronics and Microtechnology (CSEM), Neuchatel (Switzerland)
Publication Date:
Report Number(s):
NREL/JA-5J00-65653
Journal ID: ISSN 2156-3381
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Volume: 6; Journal Issue: 4; Journal ID: ISSN 2156-3381
Publisher:
IEEE
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; photovoltaic cells; silicon; computer architecture; microprocessors; photonics; absorption; couplings; multijunction solar cell; silicon solar cells; III-V semiconductor materials
OSTI Identifier:
1329999