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Title: Realization of GaInP/Si dual-junction solar cells with 29.8% 1-sun efficiency

Combining a Si solar cell with a high-bandgap top cell reduces the thermalization losses in the short wavelength and enables theoretical 1-sun efficiencies far over 30%. We have investigated the fabrication and optimization of Si-based tandem solar cells with 1.8-eV rear-heterojunction GaInP top cells. The III-V and Si heterojunction subcells were fabricated separately and joined by mechanical stacking using electrically insulating optically transparent interlayers. Our GaInP/Si dual-junction solar cells have achieved a certified cumulative 1-sun efficiency of 29.8% ± 0.6% (AM1.5g) in four-terminal operation conditions, which exceeds the record 1-sun efficiencies achieved with both III-V and Si single-junction solar cells. Furthermore, the effect of luminescent coupling between the subcells has been investigated, and optical losses in the solar cell structure have been addressed.
Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [2] ;  [1] ;  [2] ;  [1] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [1] ;  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Swiss Center for Electronics and Microtechnology (CSEM), Neuchatel (Switzerland)
Publication Date:
Report Number(s):
NREL/JA-5J00-65653
Journal ID: ISSN 2156-3381
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Volume: 6; Journal Issue: 4; Journal ID: ISSN 2156-3381
Publisher:
IEEE
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; photovoltaic cells; silicon; computer architecture; microprocessors; photonics; absorption; couplings; multijunction solar cell; silicon solar cells; III-V semiconductor materials
OSTI Identifier:
1329999

Essig, Stephanie, Steiner, Myles A., Allebe, Christophe, Geisz, John F., Paviet-Salomon, Bertrand, Ward, Scott, Descoeudres, Antoine, LaSalvia, Vincenzo, Barraud, Loris, Badel, Nicolas, Faes, Antonin, Levrat, Jacques, Despeisse, Matthieu, Ballif, Christophe, Stradins, Paul, and Young, David L.. Realization of GaInP/Si dual-junction solar cells with 29.8% 1-sun efficiency. United States: N. p., Web. doi:10.1109/JPHOTOV.2016.2549746.
Essig, Stephanie, Steiner, Myles A., Allebe, Christophe, Geisz, John F., Paviet-Salomon, Bertrand, Ward, Scott, Descoeudres, Antoine, LaSalvia, Vincenzo, Barraud, Loris, Badel, Nicolas, Faes, Antonin, Levrat, Jacques, Despeisse, Matthieu, Ballif, Christophe, Stradins, Paul, & Young, David L.. Realization of GaInP/Si dual-junction solar cells with 29.8% 1-sun efficiency. United States. doi:10.1109/JPHOTOV.2016.2549746.
Essig, Stephanie, Steiner, Myles A., Allebe, Christophe, Geisz, John F., Paviet-Salomon, Bertrand, Ward, Scott, Descoeudres, Antoine, LaSalvia, Vincenzo, Barraud, Loris, Badel, Nicolas, Faes, Antonin, Levrat, Jacques, Despeisse, Matthieu, Ballif, Christophe, Stradins, Paul, and Young, David L.. 2016. "Realization of GaInP/Si dual-junction solar cells with 29.8% 1-sun efficiency". United States. doi:10.1109/JPHOTOV.2016.2549746. https://www.osti.gov/servlets/purl/1329999.
@article{osti_1329999,
title = {Realization of GaInP/Si dual-junction solar cells with 29.8% 1-sun efficiency},
author = {Essig, Stephanie and Steiner, Myles A. and Allebe, Christophe and Geisz, John F. and Paviet-Salomon, Bertrand and Ward, Scott and Descoeudres, Antoine and LaSalvia, Vincenzo and Barraud, Loris and Badel, Nicolas and Faes, Antonin and Levrat, Jacques and Despeisse, Matthieu and Ballif, Christophe and Stradins, Paul and Young, David L.},
abstractNote = {Combining a Si solar cell with a high-bandgap top cell reduces the thermalization losses in the short wavelength and enables theoretical 1-sun efficiencies far over 30%. We have investigated the fabrication and optimization of Si-based tandem solar cells with 1.8-eV rear-heterojunction GaInP top cells. The III-V and Si heterojunction subcells were fabricated separately and joined by mechanical stacking using electrically insulating optically transparent interlayers. Our GaInP/Si dual-junction solar cells have achieved a certified cumulative 1-sun efficiency of 29.8% ± 0.6% (AM1.5g) in four-terminal operation conditions, which exceeds the record 1-sun efficiencies achieved with both III-V and Si single-junction solar cells. Furthermore, the effect of luminescent coupling between the subcells has been investigated, and optical losses in the solar cell structure have been addressed.},
doi = {10.1109/JPHOTOV.2016.2549746},
journal = {IEEE Journal of Photovoltaics},
number = 4,
volume = 6,
place = {United States},
year = {2016},
month = {4}
}