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Title: Effective mass in bilayer graphene at low carrier densities: The role of potential disorder and electron-electron interaction

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 94 Journal Issue: 16; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1329980

Li, J., Tan, L. Z., Zou, K., Stabile, A. A., Seiwell, D. J., Watanabe, K., Taniguchi, T., Louie, Steven G., and Zhu, J.. Effective mass in bilayer graphene at low carrier densities: The role of potential disorder and electron-electron interaction. United States: N. p., Web. doi:10.1103/PhysRevB.94.161406.
Li, J., Tan, L. Z., Zou, K., Stabile, A. A., Seiwell, D. J., Watanabe, K., Taniguchi, T., Louie, Steven G., & Zhu, J.. Effective mass in bilayer graphene at low carrier densities: The role of potential disorder and electron-electron interaction. United States. doi:10.1103/PhysRevB.94.161406.
Li, J., Tan, L. Z., Zou, K., Stabile, A. A., Seiwell, D. J., Watanabe, K., Taniguchi, T., Louie, Steven G., and Zhu, J.. 2016. "Effective mass in bilayer graphene at low carrier densities: The role of potential disorder and electron-electron interaction". United States. doi:10.1103/PhysRevB.94.161406.
@article{osti_1329980,
title = {Effective mass in bilayer graphene at low carrier densities: The role of potential disorder and electron-electron interaction},
author = {Li, J. and Tan, L. Z. and Zou, K. and Stabile, A. A. and Seiwell, D. J. and Watanabe, K. and Taniguchi, T. and Louie, Steven G. and Zhu, J.},
abstractNote = {},
doi = {10.1103/PhysRevB.94.161406},
journal = {Physical Review B},
number = 16,
volume = 94,
place = {United States},
year = {2016},
month = {10}
}

Works referenced in this record:

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Boron nitride substrates for high-quality graphene electronics
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