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Title: Pinched hysteresis loop in defect-free ferroelectric materials

Authors:
; ; ;
Publication Date:
Grant/Contract Number:
ER-46612
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 94 Journal Issue: 14; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1329953

Xu, Bin, Paillard, Charles, Dkhil, Brahim, and Bellaiche, L. Pinched hysteresis loop in defect-free ferroelectric materials. United States: N. p., Web. doi:10.1103/PhysRevB.94.140101.
Xu, Bin, Paillard, Charles, Dkhil, Brahim, & Bellaiche, L. Pinched hysteresis loop in defect-free ferroelectric materials. United States. doi:10.1103/PhysRevB.94.140101.
Xu, Bin, Paillard, Charles, Dkhil, Brahim, and Bellaiche, L. 2016. "Pinched hysteresis loop in defect-free ferroelectric materials". United States. doi:10.1103/PhysRevB.94.140101.
@article{osti_1329953,
title = {Pinched hysteresis loop in defect-free ferroelectric materials},
author = {Xu, Bin and Paillard, Charles and Dkhil, Brahim and Bellaiche, L.},
abstractNote = {},
doi = {10.1103/PhysRevB.94.140101},
journal = {Physical Review B},
number = 14,
volume = 94,
place = {United States},
year = {2016},
month = {10}
}