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Title: Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes

Abstract

Bulk GaAs samples with different surface cleave planes were implanted with 100 and 10 000 V hydrogen ions inside an ultrahigh vacuum test apparatus to simulate ion back-bombardment of the photocathode inside a DC high voltage photogun. The photocathode yield, or quantum efficiency, could easily be recovered following implantation with 100 V hydrogen ions but not for 10 000 V ions. Moreover, the implantation damage with 10 000 V hydrogen ions was more pronounced for GaAs photocathode samples with (100) and (111A) cleave planes, compared to the photocathode with (110) cleave plane. Lastly, this result is consistent with enhanced ion channeling for the (110) cleave plane compared to the other cleave planes, with ions penetrating deeper into the photocathode material beyond the absorption depth of the laser light and beyond the region of the photocathode where the photoemitted electrons originate.

Authors:
; ; ;
Publication Date:
Research Org.:
Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Nuclear Physics (NP)
OSTI Identifier:
1329952
Alternate Identifier(s):
OSTI ID: 1330460
Report Number(s):
JLAB-ACC-16-2304; DOE/OR/23177-3885
Journal ID: ISSN 2469-9888; PRABFM; 103402
Grant/Contract Number:  
AC05-06OR23177
Resource Type:
Published Article
Journal Name:
Physical Review Accelerators and Beams
Additional Journal Information:
Journal Name: Physical Review Accelerators and Beams Journal Volume: 19 Journal Issue: 10; Journal ID: ISSN 2469-9888
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English
Subject:
43 PARTICLE ACCELERATORS

Citation Formats

Liu, Wei, Zhang, Shukui, Stutzman, Marcy, and Poelker, Matt. Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes. United States: N. p., 2016. Web. doi:10.1103/PhysRevAccelBeams.19.103402.
Liu, Wei, Zhang, Shukui, Stutzman, Marcy, & Poelker, Matt. Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes. United States. doi:10.1103/PhysRevAccelBeams.19.103402.
Liu, Wei, Zhang, Shukui, Stutzman, Marcy, and Poelker, Matt. Mon . "Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes". United States. doi:10.1103/PhysRevAccelBeams.19.103402.
@article{osti_1329952,
title = {Effects of ion bombardment on bulk GaAs photocathodes with different surface-cleavage planes},
author = {Liu, Wei and Zhang, Shukui and Stutzman, Marcy and Poelker, Matt},
abstractNote = {Bulk GaAs samples with different surface cleave planes were implanted with 100 and 10 000 V hydrogen ions inside an ultrahigh vacuum test apparatus to simulate ion back-bombardment of the photocathode inside a DC high voltage photogun. The photocathode yield, or quantum efficiency, could easily be recovered following implantation with 100 V hydrogen ions but not for 10 000 V ions. Moreover, the implantation damage with 10 000 V hydrogen ions was more pronounced for GaAs photocathode samples with (100) and (111A) cleave planes, compared to the photocathode with (110) cleave plane. Lastly, this result is consistent with enhanced ion channeling for the (110) cleave plane compared to the other cleave planes, with ions penetrating deeper into the photocathode material beyond the absorption depth of the laser light and beyond the region of the photocathode where the photoemitted electrons originate.},
doi = {10.1103/PhysRevAccelBeams.19.103402},
journal = {Physical Review Accelerators and Beams},
number = 10,
volume = 19,
place = {United States},
year = {2016},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevAccelBeams.19.103402

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