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Title: Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition

Abstract

Epitaxial layered ternary metal-nitride FeMoN2, (Fe0.33 Mo0.67)MoN2, CoMoN2, and FeWN2 thin films have been grown on c-plane sapphire substrates by polymer-assisted deposition. The ABN2 layer sits on top of the oxygen sublattices of the substrate with three possible matching configurations due to the significantly reduced lattice mismatch. The doping composition and elements affect not only the out-of-plane lattice parameters but also the temperature-dependent electrical properties. These films have resistivity in the range of 0.1–1 mΩ·cm, showing tunable metallic or semiconducting behaviors by adjusting the composition. A modified parallel connection channel model has been used to analyze the grain boundary and Coulomb blockade effect on the electrical properties. Furthermore, the growth of the high crystallinity layered epitaxial thin films provides an avenue to study the composition-structure-property relationship in ABN2 materials through A and B-site substitution.

Authors:
ORCiD logo [1];  [2]; ORCiD logo [1];  [1];  [1];  [1];  [3];  [1];  [1];  [4];  [3];  [1]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  2. Tsinghua Univ., Beijing (China)
  3. Univ. of Texas at San Antonio, San Antonio, TX (United States)
  4. Texas A & M Univ., College Station, TX (United States)
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Laboratory Directed Research and Development (LDRD) Program
OSTI Identifier:
1329907
Alternate Identifier(s):
OSTI ID: 1307786
Report Number(s):
LA-UR-16-24476
Journal ID: ISSN 0003-6951; APPLAB
Grant/Contract Number:  
AC52-06NA25396
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 8; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; inorganic and physical chemistry; material science; thin film structure; molybdenum; epitaxy; electrical resistivity; materials properties

Citation Formats

Enriquez, Erik M., Zhang, Yingying, Chen, Aiping, Bi, Zhenxing, Wang, Yongqiang, Fu, Engang, Harrell, Zachary John, Lu, Xujie, Dowden, Paul Charles, Wang, Haiyan, Chen, Chonglin, and Jia, Quanxi. Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition. United States: N. p., 2016. Web. doi:10.1063/1.4961880.
Enriquez, Erik M., Zhang, Yingying, Chen, Aiping, Bi, Zhenxing, Wang, Yongqiang, Fu, Engang, Harrell, Zachary John, Lu, Xujie, Dowden, Paul Charles, Wang, Haiyan, Chen, Chonglin, & Jia, Quanxi. Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition. United States. doi:10.1063/1.4961880.
Enriquez, Erik M., Zhang, Yingying, Chen, Aiping, Bi, Zhenxing, Wang, Yongqiang, Fu, Engang, Harrell, Zachary John, Lu, Xujie, Dowden, Paul Charles, Wang, Haiyan, Chen, Chonglin, and Jia, Quanxi. Fri . "Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition". United States. doi:10.1063/1.4961880. https://www.osti.gov/servlets/purl/1329907.
@article{osti_1329907,
title = {Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition},
author = {Enriquez, Erik M. and Zhang, Yingying and Chen, Aiping and Bi, Zhenxing and Wang, Yongqiang and Fu, Engang and Harrell, Zachary John and Lu, Xujie and Dowden, Paul Charles and Wang, Haiyan and Chen, Chonglin and Jia, Quanxi},
abstractNote = {Epitaxial layered ternary metal-nitride FeMoN2, (Fe0.33 Mo0.67)MoN2, CoMoN2, and FeWN2 thin films have been grown on c-plane sapphire substrates by polymer-assisted deposition. The ABN2 layer sits on top of the oxygen sublattices of the substrate with three possible matching configurations due to the significantly reduced lattice mismatch. The doping composition and elements affect not only the out-of-plane lattice parameters but also the temperature-dependent electrical properties. These films have resistivity in the range of 0.1–1 mΩ·cm, showing tunable metallic or semiconducting behaviors by adjusting the composition. A modified parallel connection channel model has been used to analyze the grain boundary and Coulomb blockade effect on the electrical properties. Furthermore, the growth of the high crystallinity layered epitaxial thin films provides an avenue to study the composition-structure-property relationship in ABN2 materials through A and B-site substitution.},
doi = {10.1063/1.4961880},
journal = {Applied Physics Letters},
number = 8,
volume = 109,
place = {United States},
year = {2016},
month = {8}
}

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