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Title: UV-luminescent MgZnO semiconductor alloys: nanostructure and optical properties

Abstract

MgZnO is emerging as a vital semiconductor-alloy system with desirable optical properties that can span a large range of the UV spectrum. Due to its benign chemical character, MgZnO is considered to be an environmentally friendly material. This paper presents studies on annealing as a useful and straightforward approach for the enhancement of the optical and crystal quality of Mg 0.17Zn 0.83O nanocrystalline films grown via DC sputtering. The alloys were studied via several imaging and optical techniques. It was found that high-temperature annealing, ~900 °C, in Argon atmosphere, significantly improves the solubility of the alloy. This temperature range is consistent with the thermal diffusion temperature of Mg needed for the creation of a soluble alloy. Moreover, the annealing process was found to minimize the undesirable visible luminescence, attributed to Mg and Zn interstitials, while significantly enhancing the bandgap sharpness and the efficiency of the UV-luminescence at ~3.5 eV. The analysis indicated that these optical attributes were achieved due to the combined effects of good solubility, an improved morphology, and a reduction of native defects. The annealing was also proven to be beneficial for the reduction of the compressive stress in the alloy: a relaxation ~1.8 GPa was calculated viamore » Raman scattering. The inherent stress was inferred to originate mainly from the granular morphology of the alloys.« less

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [3];  [3];  [4];  [5];  [1]
  1. Univ. of Idaho, Moscow, ID (United States). Dept. of Physics
  2. Lewis-Clark State College, Lewiston, ID (United States). Division of Natural Sciences and Mathematics
  3. Washington State Univ., Pullman, WA (United States). Dept. of Physics and Astronomy
  4. Univ. of Idaho, Moscow, ID (United States). Electron Microscopy Center
  5. Washington State Univ., Pullman, WA (United States). School of Mechanical and Materials Engineering
Publication Date:
Research Org.:
Washington State Univ., Pullman, WA (United States); Univ. of Idaho, Moscow, ID (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1329729
Alternate Identifier(s):
OSTI ID: 1423795; OSTI ID: 1489141
Grant/Contract Number:  
FG02-07ER46386
Resource Type:
Published Article
Journal Name:
Journal of Materials Science Materials in Electronics
Additional Journal Information:
Journal Volume: 28; Journal Issue: 3; Journal ID: ISSN 0957-4522
Publisher:
Springer
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; metal organic chemical vapor deposition; native defect; alloy film; Urbach energy; nanocrystalline film

Citation Formats

Thapa, Dinesh, Huso, Jesse, Miklos, Kevin, Wojcik, Peter M., McIlroy, David N., Morrison, John L., Corolewski, Caleb, McCluskey, Matthew D., Williams, Thomas J., Grant Norton, M., and Bergman, Leah. UV-luminescent MgZnO semiconductor alloys: nanostructure and optical properties. United States: N. p., 2016. Web. doi:10.1007/s10854-016-5825-2.
Thapa, Dinesh, Huso, Jesse, Miklos, Kevin, Wojcik, Peter M., McIlroy, David N., Morrison, John L., Corolewski, Caleb, McCluskey, Matthew D., Williams, Thomas J., Grant Norton, M., & Bergman, Leah. UV-luminescent MgZnO semiconductor alloys: nanostructure and optical properties. United States. doi:10.1007/s10854-016-5825-2.
Thapa, Dinesh, Huso, Jesse, Miklos, Kevin, Wojcik, Peter M., McIlroy, David N., Morrison, John L., Corolewski, Caleb, McCluskey, Matthew D., Williams, Thomas J., Grant Norton, M., and Bergman, Leah. Mon . "UV-luminescent MgZnO semiconductor alloys: nanostructure and optical properties". United States. doi:10.1007/s10854-016-5825-2.
@article{osti_1329729,
title = {UV-luminescent MgZnO semiconductor alloys: nanostructure and optical properties},
author = {Thapa, Dinesh and Huso, Jesse and Miklos, Kevin and Wojcik, Peter M. and McIlroy, David N. and Morrison, John L. and Corolewski, Caleb and McCluskey, Matthew D. and Williams, Thomas J. and Grant Norton, M. and Bergman, Leah},
abstractNote = {MgZnO is emerging as a vital semiconductor-alloy system with desirable optical properties that can span a large range of the UV spectrum. Due to its benign chemical character, MgZnO is considered to be an environmentally friendly material. This paper presents studies on annealing as a useful and straightforward approach for the enhancement of the optical and crystal quality of Mg0.17Zn0.83O nanocrystalline films grown via DC sputtering. The alloys were studied via several imaging and optical techniques. It was found that high-temperature annealing, ~900 °C, in Argon atmosphere, significantly improves the solubility of the alloy. This temperature range is consistent with the thermal diffusion temperature of Mg needed for the creation of a soluble alloy. Moreover, the annealing process was found to minimize the undesirable visible luminescence, attributed to Mg and Zn interstitials, while significantly enhancing the bandgap sharpness and the efficiency of the UV-luminescence at ~3.5 eV. The analysis indicated that these optical attributes were achieved due to the combined effects of good solubility, an improved morphology, and a reduction of native defects. The annealing was also proven to be beneficial for the reduction of the compressive stress in the alloy: a relaxation ~1.8 GPa was calculated via Raman scattering. The inherent stress was inferred to originate mainly from the granular morphology of the alloys.},
doi = {10.1007/s10854-016-5825-2},
journal = {Journal of Materials Science Materials in Electronics},
number = 3,
volume = 28,
place = {United States},
year = {2016},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1007/s10854-016-5825-2

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Cited by: 2 works
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