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Title: Photoelectric polarization-sensitive broadband photoresponse from interface junction states in graphene

Graphene has established itself as a promising optoelectronic material. Many details of the photoresponse (PR) mechanisms in graphene in the THz-to-visible range have been revealed, however, new intricacies continue to emerge. Interface junctions, formed at the boundaries between parts of graphene with different number of layers or different stacking orders, and making connection between electrical contacts, provide another peculiar setup to establish PR. Here, we experimentally demonstrate an enhanced polarization sensitive photoelectric PR in graphene sheets containing interface junctions as compared to homogenous graphene sheets in the visible, infrared, and THz spectral regions. Our numerical simulations show that highly localized electronic states are created at the interface junctions, and these states exhibit a unique energy spectrum and enhanced probabilities for optical transitions. Here, the interaction of electrons from interface junction states with electromagnetic fields generates a polarization-sensitive PR that is maximal for the polarization direction perpendicular to the junction interface.
Authors:
ORCiD logo [1] ;  [2] ; ORCiD logo [3] ;  [4] ;  [1] ;  [1] ;  [4] ;  [4] ;  [4] ;  [2] ; ORCiD logo [5] ;  [6] ;  [6]
  1. New Mexico Tech, Socorro, NM (United States)
  2. Univ. of California-Riverside, Riverside, CA (United States)
  3. Univ. Tecnica Federico Santa Maria, Valparaiso (Chile)
  4. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  5. Univ. de Chile, Santiago (Chile)
  6. Ruhr-Univ. Bochum, Bochum (Germany); National Univ. of Science and Technology MISIS, Moscow (Russia)
Publication Date:
Report Number(s):
SAND-2016-10222J
Journal ID: ISSN 2053-1583; 648210
Grant/Contract Number:
AC04-94AL85000
Type:
Published Article
Journal Name:
2D Materials
Additional Journal Information:
Journal Volume: 4; Journal Issue: 1; Journal ID: ISSN 2053-1583
Publisher:
IOP Publishing
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; graphene interface junctions; polarization sensitive photoresponse; interface junction states
OSTI Identifier:
1329727
Alternate Identifier(s):
OSTI ID: 1329628; OSTI ID: 1329728

Kalugin, Nikolai G., Jing, Lei, Morell, Eric Suarez, Dyer, Gregory C., Wickey, Lee, Ovezmyradov, Mekan, Grine, Albert D., Wanke, Michael C., Shaner, Eric A., Lau, Chun Ning, Foa Torres, Luis E. F., Fistul, Mikhail V., and Efetov, Konstantin B.. Photoelectric polarization-sensitive broadband photoresponse from interface junction states in graphene. United States: N. p., Web. doi:10.1088/2053-1583/4/1/015002.
Kalugin, Nikolai G., Jing, Lei, Morell, Eric Suarez, Dyer, Gregory C., Wickey, Lee, Ovezmyradov, Mekan, Grine, Albert D., Wanke, Michael C., Shaner, Eric A., Lau, Chun Ning, Foa Torres, Luis E. F., Fistul, Mikhail V., & Efetov, Konstantin B.. Photoelectric polarization-sensitive broadband photoresponse from interface junction states in graphene. United States. doi:10.1088/2053-1583/4/1/015002.
Kalugin, Nikolai G., Jing, Lei, Morell, Eric Suarez, Dyer, Gregory C., Wickey, Lee, Ovezmyradov, Mekan, Grine, Albert D., Wanke, Michael C., Shaner, Eric A., Lau, Chun Ning, Foa Torres, Luis E. F., Fistul, Mikhail V., and Efetov, Konstantin B.. 2016. "Photoelectric polarization-sensitive broadband photoresponse from interface junction states in graphene". United States. doi:10.1088/2053-1583/4/1/015002.
@article{osti_1329727,
title = {Photoelectric polarization-sensitive broadband photoresponse from interface junction states in graphene},
author = {Kalugin, Nikolai G. and Jing, Lei and Morell, Eric Suarez and Dyer, Gregory C. and Wickey, Lee and Ovezmyradov, Mekan and Grine, Albert D. and Wanke, Michael C. and Shaner, Eric A. and Lau, Chun Ning and Foa Torres, Luis E. F. and Fistul, Mikhail V. and Efetov, Konstantin B.},
abstractNote = {Graphene has established itself as a promising optoelectronic material. Many details of the photoresponse (PR) mechanisms in graphene in the THz-to-visible range have been revealed, however, new intricacies continue to emerge. Interface junctions, formed at the boundaries between parts of graphene with different number of layers or different stacking orders, and making connection between electrical contacts, provide another peculiar setup to establish PR. Here, we experimentally demonstrate an enhanced polarization sensitive photoelectric PR in graphene sheets containing interface junctions as compared to homogenous graphene sheets in the visible, infrared, and THz spectral regions. Our numerical simulations show that highly localized electronic states are created at the interface junctions, and these states exhibit a unique energy spectrum and enhanced probabilities for optical transitions. Here, the interaction of electrons from interface junction states with electromagnetic fields generates a polarization-sensitive PR that is maximal for the polarization direction perpendicular to the junction interface.},
doi = {10.1088/2053-1583/4/1/015002},
journal = {2D Materials},
number = 1,
volume = 4,
place = {United States},
year = {2016},
month = {10}
}