Iron as a source of efficient Shockley-Read-Hall recombination in GaN
Abstract
Transition metal impurities are known to adversely affect the efficiency of electronic and optoelectronic devices by introducing midgap defect levels that can act as efficient Shockley-Read-Hall centers. Iron impurities in GaN do not follow this pattern: their defect level is close to the conduction band and hence far from midgap. Here, using hybrid functional first-principles calculations, we uncover the electronic properties of Fe and we demonstrate that its high efficiency as a nonradiative center is due to a recombination cycle involving excited states. Unintentional incorporation of iron impurities at modest concentrations (1015 cm–3) leads to nanosecond nonradiative recombination lifetimes, which can be detrimental for the efficiency of electronic and optoelectronic devices.
- Authors:
-
- Univ. of California, Santa Barbara, CA (United States). Materials Dept.
- Univ. of California, Santa Barbara, CA (United States). Dept. of Physics
- Univ. of California, Santa Barbara, CA (United States). Materials Dept.; Rutgers Univ., Piscataway, NJ (United States). Dept. of Physics and Astronomy
- Univ. of Vienna (Austria). Faculty of Physics, Computational Materials Physics
- KTH Royal Inst. of Technology, Stockholm (Sweden). Dept. of Materials and Nano Physics
- Center for Physical Sciences and Technology, Vilnius (Lithuania)
- Publication Date:
- Research Org.:
- Univ. of California, Santa Barbara, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); European Union (EU)
- OSTI Identifier:
- 1465786
- Alternate Identifier(s):
- OSTI ID: 1329497
- Grant/Contract Number:
- SC0010689; AC02-05CH11231; 657054
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 109; Journal Issue: 16; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Citation Formats
Wickramaratne, Darshana, Shen, Jimmy-Xuan, Dreyer, Cyrus E., Engel, Manuel, Marsman, Martijn, Kresse, Georg, Marcinkevičius, Saulius, Alkauskas, Audrius, and Van de Walle, Chris G. Iron as a source of efficient Shockley-Read-Hall recombination in GaN. United States: N. p., 2016.
Web. doi:10.1063/1.4964831.
Wickramaratne, Darshana, Shen, Jimmy-Xuan, Dreyer, Cyrus E., Engel, Manuel, Marsman, Martijn, Kresse, Georg, Marcinkevičius, Saulius, Alkauskas, Audrius, & Van de Walle, Chris G. Iron as a source of efficient Shockley-Read-Hall recombination in GaN. United States. https://doi.org/10.1063/1.4964831
Wickramaratne, Darshana, Shen, Jimmy-Xuan, Dreyer, Cyrus E., Engel, Manuel, Marsman, Martijn, Kresse, Georg, Marcinkevičius, Saulius, Alkauskas, Audrius, and Van de Walle, Chris G. Fri .
"Iron as a source of efficient Shockley-Read-Hall recombination in GaN". United States. https://doi.org/10.1063/1.4964831. https://www.osti.gov/servlets/purl/1465786.
@article{osti_1465786,
title = {Iron as a source of efficient Shockley-Read-Hall recombination in GaN},
author = {Wickramaratne, Darshana and Shen, Jimmy-Xuan and Dreyer, Cyrus E. and Engel, Manuel and Marsman, Martijn and Kresse, Georg and Marcinkevičius, Saulius and Alkauskas, Audrius and Van de Walle, Chris G.},
abstractNote = {Transition metal impurities are known to adversely affect the efficiency of electronic and optoelectronic devices by introducing midgap defect levels that can act as efficient Shockley-Read-Hall centers. Iron impurities in GaN do not follow this pattern: their defect level is close to the conduction band and hence far from midgap. Here, using hybrid functional first-principles calculations, we uncover the electronic properties of Fe and we demonstrate that its high efficiency as a nonradiative center is due to a recombination cycle involving excited states. Unintentional incorporation of iron impurities at modest concentrations (1015 cm–3) leads to nanosecond nonradiative recombination lifetimes, which can be detrimental for the efficiency of electronic and optoelectronic devices.},
doi = {10.1063/1.4964831},
journal = {Applied Physics Letters},
number = 16,
volume = 109,
place = {United States},
year = {Fri Oct 21 00:00:00 EDT 2016},
month = {Fri Oct 21 00:00:00 EDT 2016}
}
Web of Science
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