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Title: Patterned growth of p-type MoS 2 atomic layers using sol-gel as precursor

2D layered MoS 2 has drawn intense attention for its applications in flexible electronic, optoelectronic, and spintronic devices. Most of the MoS 2 atomic layers grown by conventional chemical vapor deposition techniques are n-type due to the abundant sulfur vacancies. Facile production of MoS 2 atomic layers with p-type behavior, however, remains challenging. Here, a novel one-step growth has been developed to attain p-type MoS 2 layers in large scale by using Mo-containing sol–gel, including 1% tungsten (W). Atomic-resolution electron microscopy characterization reveals that small tungsten oxide clusters are commonly present on the as-grown MoS 2 film due to the incomplete reduction of W precursor at the reaction temperature. These omnipresent small tungsten oxide clusters contribute to the p-type behavior, as verified by density functional theory calculations, while preserving the crystallinity of the MoS 2 atomic layers. The Mo containing sol–gel precursor is compatible with the soft-lithography techniques, which enables patterned growth of p-type MoS 2 atomic layers into regular arrays with different shapes, holding great promise for highly integrated device applications. Lastly, an atomically thin p–n junction is fabricated by the as-prepared MoS 2, which shows strong rectifying behavior.
Authors:
 [1] ;  [2] ;  [1] ;  [3] ;  [1] ;  [1] ;  [1] ;  [3] ;  [2] ;  [3] ;  [1]
  1. Harbin Institute of Technology, Harbin (People's Republic of China)
  2. Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Grant/Contract Number:
AC05-00OR22725; FG02-09ER46554; AC02-05CH11231
Type:
Accepted Manuscript
Journal Name:
Advanced Functional Materials
Additional Journal Information:
Journal Volume: 26; Journal Issue: 35; Journal ID: ISSN 1616-301X
Publisher:
Wiley
Research Org:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1329138
Alternate Identifier(s):
OSTI ID: 1401451

Zheng, Wei, Lin, Junhao, Feng, Wei, Xiao, Kai, Qiu, Yunfeng, Chen, XiaoShuang, Liu, Guangbo, Cao, Wenwu, Pantelides, Sokrates T., Zhou, Wu, and Hu, PingAn. Patterned growth of p-type MoS2 atomic layers using sol-gel as precursor. United States: N. p., Web. doi:10.1002/adfm.201602494.
Zheng, Wei, Lin, Junhao, Feng, Wei, Xiao, Kai, Qiu, Yunfeng, Chen, XiaoShuang, Liu, Guangbo, Cao, Wenwu, Pantelides, Sokrates T., Zhou, Wu, & Hu, PingAn. Patterned growth of p-type MoS2 atomic layers using sol-gel as precursor. United States. doi:10.1002/adfm.201602494.
Zheng, Wei, Lin, Junhao, Feng, Wei, Xiao, Kai, Qiu, Yunfeng, Chen, XiaoShuang, Liu, Guangbo, Cao, Wenwu, Pantelides, Sokrates T., Zhou, Wu, and Hu, PingAn. 2016. "Patterned growth of p-type MoS2 atomic layers using sol-gel as precursor". United States. doi:10.1002/adfm.201602494. https://www.osti.gov/servlets/purl/1329138.
@article{osti_1329138,
title = {Patterned growth of p-type MoS2 atomic layers using sol-gel as precursor},
author = {Zheng, Wei and Lin, Junhao and Feng, Wei and Xiao, Kai and Qiu, Yunfeng and Chen, XiaoShuang and Liu, Guangbo and Cao, Wenwu and Pantelides, Sokrates T. and Zhou, Wu and Hu, PingAn},
abstractNote = {2D layered MoS2 has drawn intense attention for its applications in flexible electronic, optoelectronic, and spintronic devices. Most of the MoS2 atomic layers grown by conventional chemical vapor deposition techniques are n-type due to the abundant sulfur vacancies. Facile production of MoS2 atomic layers with p-type behavior, however, remains challenging. Here, a novel one-step growth has been developed to attain p-type MoS2 layers in large scale by using Mo-containing sol–gel, including 1% tungsten (W). Atomic-resolution electron microscopy characterization reveals that small tungsten oxide clusters are commonly present on the as-grown MoS2 film due to the incomplete reduction of W precursor at the reaction temperature. These omnipresent small tungsten oxide clusters contribute to the p-type behavior, as verified by density functional theory calculations, while preserving the crystallinity of the MoS2 atomic layers. The Mo containing sol–gel precursor is compatible with the soft-lithography techniques, which enables patterned growth of p-type MoS2 atomic layers into regular arrays with different shapes, holding great promise for highly integrated device applications. Lastly, an atomically thin p–n junction is fabricated by the as-prepared MoS2, which shows strong rectifying behavior.},
doi = {10.1002/adfm.201602494},
journal = {Advanced Functional Materials},
number = 35,
volume = 26,
place = {United States},
year = {2016},
month = {7}
}

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