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Title: Thermal conductivity switch: Optimal semiconductor/metal melting transition

Authors:
;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1329098
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 94 Journal Issue: 15; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Kim, Kwangnam, and Kaviany, Massoud. Thermal conductivity switch: Optimal semiconductor/metal melting transition. United States: N. p., 2016. Web. doi:10.1103/PhysRevB.94.155203.
Kim, Kwangnam, & Kaviany, Massoud. Thermal conductivity switch: Optimal semiconductor/metal melting transition. United States. doi:10.1103/PhysRevB.94.155203.
Kim, Kwangnam, and Kaviany, Massoud. Mon . "Thermal conductivity switch: Optimal semiconductor/metal melting transition". United States. doi:10.1103/PhysRevB.94.155203.
@article{osti_1329098,
title = {Thermal conductivity switch: Optimal semiconductor/metal melting transition},
author = {Kim, Kwangnam and Kaviany, Massoud},
abstractNote = {},
doi = {10.1103/PhysRevB.94.155203},
journal = {Physical Review B},
number = 15,
volume = 94,
place = {United States},
year = {2016},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.94.155203

Citation Metrics:
Cited by: 7 works
Citation information provided by
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Works referenced in this record:

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First-Principles Determination of Ultrahigh Thermal Conductivity of Boron Arsenide: A Competitor for Diamond?
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