skip to main content

DOE PAGESDOE PAGES

Title: Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells

Here, we present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO 2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm -2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures (~100 nm thick) grown on n-Cz wafers with pH3 PIII doping gave implied open circuit voltage (iV oc) values of 730 mV with J o values of 2 fA/cm 2. Samples doped with B 2H 6 gave iV oc values of 690 mV and J o values of 24 fA/cm 2, outperforming BF 3 doping, which gave iV oc values in the 660-680 mV range. Samples were further characterized by SIMS, photoluminescence, TEM, EELS, and post-metallization TLM to reveal micro- and macro-scopic structural, chemical and electrical information.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Report Number(s):
NREL/JA-5J00-66528
Journal ID: ISSN 0927-0248
Grant/Contract Number:
AC36-08GO28308; AC36–08-GO28308
Type:
Accepted Manuscript
Journal Name:
Solar Energy Materials and Solar Cells
Additional Journal Information:
Journal Volume: 158; Journal Issue: P1; Journal ID: ISSN 0927-0248
Publisher:
Elsevier
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; plasma immersion ion implantation; passivated contacts; silicon; solar cells
OSTI Identifier:
1328644
Alternate Identifier(s):
OSTI ID: 1396784

Young, David L., Nemeth, William, LaSalvia, Vincenzo, Page, Matthew R., Theingi, San, Aguiar, Jeffery, Lee, Benjamin G., and Stradins, Paul. Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells. United States: N. p., Web. doi:10.1016/j.solmat.2016.05.044.
Young, David L., Nemeth, William, LaSalvia, Vincenzo, Page, Matthew R., Theingi, San, Aguiar, Jeffery, Lee, Benjamin G., & Stradins, Paul. Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells. United States. doi:10.1016/j.solmat.2016.05.044.
Young, David L., Nemeth, William, LaSalvia, Vincenzo, Page, Matthew R., Theingi, San, Aguiar, Jeffery, Lee, Benjamin G., and Stradins, Paul. 2016. "Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells". United States. doi:10.1016/j.solmat.2016.05.044. https://www.osti.gov/servlets/purl/1328644.
@article{osti_1328644,
title = {Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells},
author = {Young, David L. and Nemeth, William and LaSalvia, Vincenzo and Page, Matthew R. and Theingi, San and Aguiar, Jeffery and Lee, Benjamin G. and Stradins, Paul},
abstractNote = {Here, we present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm-2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures (~100 nm thick) grown on n-Cz wafers with pH3 PIII doping gave implied open circuit voltage (iVoc) values of 730 mV with Jo values of 2 fA/cm2. Samples doped with B2H6 gave iVoc values of 690 mV and Jo values of 24 fA/cm2, outperforming BF3 doping, which gave iVoc values in the 660-680 mV range. Samples were further characterized by SIMS, photoluminescence, TEM, EELS, and post-metallization TLM to reveal micro- and macro-scopic structural, chemical and electrical information.},
doi = {10.1016/j.solmat.2016.05.044},
journal = {Solar Energy Materials and Solar Cells},
number = P1,
volume = 158,
place = {United States},
year = {2016},
month = {6}
}