Epitaxial strain and its relaxation at the LaAlO3/SrTiO3 interface
Abstract
A series of LaAlO3 thin films with different thicknesses were deposited by pulsed laser deposition at temperatures from 720°C to 800°C. The results from grazing incidence x-ray diffraction and reciprocal space mapping indicate that a thin layer of LaAlO3 adjacent to the SrTiO3 substrate remains almost coherently strained to the substrate, while the top layer starts to relax quickly above a certain critical thickness, followed by a gradual relaxation at larger film thickness when they are grown at lower temperatures. The atomic force microscopy results show that the fast relaxation is accompanied by the formation of cracks on the film surface. This can be ascribed to the larger energy release rate when compared with the resistance of LaAlO3 to cracking, according to calculations from the Griffith fracture theory. For films grown at 720°C, a drop in sheet resistance by two orders of magnitude is observed when the top layer starts to relax, indicating a relationship between the strain and the conductivity of the two-dimensional electron gas at the LaAlO3/SrTiO3 interface. The strain engineered by growth temperature thus provides a useful tool for the manipulation of the electronic properties of oxide heterointerfaces.
- Authors:
-
- Temple Univ., Philadelphia, PA (United States). Dept. of Physics; Suzhou Univ. of Science and Technology, Suzhou (China). Research Center for Solid State Physics and Materials and School of Mathematics and Physics
- Temple Univ., Philadelphia, PA (United States). Dept. of Physics
- Pennsylvania State Univ., University Park, PA (United States). Dept. of Material Sciences and Engineering; Xi'an Jiaotong Univ., Xi'an (China). State Key Lab. for Strength and Vibration of Mechanical Structures and School of Aerospace
- Pennsylvania State Univ., University Park, PA (United States). Dept. of Material Sciences and Engineering
- Drexel Univ., Philadelphia, PA (United States). Dept. of Materials Science and Engineering
- Publication Date:
- Research Org.:
- Temple Univ., Philadelphia, PA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); US Department of the Navy, Office of Naval Research (ONR); National Natural Science Foundation of China (NSFC)
- OSTI Identifier:
- 1467869
- Alternate Identifier(s):
- OSTI ID: 1328639
- Grant/Contract Number:
- SC0004764; DMR-1410714; CMMI-1031403; N00014-1101-0296; 11304089
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 120; Journal Issue: 8; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; atomic force microscopy; lattice constants; thin film growth; cracks; reflection high energy electron diffraction; stress relaxation; epitaxy; electron gas
Citation Formats
Liu, Guozhen, Lei, Qingyu, Wolak, Matthäus A., Li, Qun, Chen, Long-Qing, Winkler, Christopher, Sloppy, Jennifer, Taheri, Mitra L., and Xi, Xiaoxing. Epitaxial strain and its relaxation at the LaAlO3/SrTiO3 interface. United States: N. p., 2016.
Web. doi:10.1063/1.4961330.
Liu, Guozhen, Lei, Qingyu, Wolak, Matthäus A., Li, Qun, Chen, Long-Qing, Winkler, Christopher, Sloppy, Jennifer, Taheri, Mitra L., & Xi, Xiaoxing. Epitaxial strain and its relaxation at the LaAlO3/SrTiO3 interface. United States. https://doi.org/10.1063/1.4961330
Liu, Guozhen, Lei, Qingyu, Wolak, Matthäus A., Li, Qun, Chen, Long-Qing, Winkler, Christopher, Sloppy, Jennifer, Taheri, Mitra L., and Xi, Xiaoxing. Mon .
"Epitaxial strain and its relaxation at the LaAlO3/SrTiO3 interface". United States. https://doi.org/10.1063/1.4961330. https://www.osti.gov/servlets/purl/1467869.
@article{osti_1467869,
title = {Epitaxial strain and its relaxation at the LaAlO3/SrTiO3 interface},
author = {Liu, Guozhen and Lei, Qingyu and Wolak, Matthäus A. and Li, Qun and Chen, Long-Qing and Winkler, Christopher and Sloppy, Jennifer and Taheri, Mitra L. and Xi, Xiaoxing},
abstractNote = {A series of LaAlO3 thin films with different thicknesses were deposited by pulsed laser deposition at temperatures from 720°C to 800°C. The results from grazing incidence x-ray diffraction and reciprocal space mapping indicate that a thin layer of LaAlO3 adjacent to the SrTiO3 substrate remains almost coherently strained to the substrate, while the top layer starts to relax quickly above a certain critical thickness, followed by a gradual relaxation at larger film thickness when they are grown at lower temperatures. The atomic force microscopy results show that the fast relaxation is accompanied by the formation of cracks on the film surface. This can be ascribed to the larger energy release rate when compared with the resistance of LaAlO3 to cracking, according to calculations from the Griffith fracture theory. For films grown at 720°C, a drop in sheet resistance by two orders of magnitude is observed when the top layer starts to relax, indicating a relationship between the strain and the conductivity of the two-dimensional electron gas at the LaAlO3/SrTiO3 interface. The strain engineered by growth temperature thus provides a useful tool for the manipulation of the electronic properties of oxide heterointerfaces.},
doi = {10.1063/1.4961330},
journal = {Journal of Applied Physics},
number = 8,
volume = 120,
place = {United States},
year = {Mon Aug 22 00:00:00 EDT 2016},
month = {Mon Aug 22 00:00:00 EDT 2016}
}
Web of Science
Works referenced in this record:
Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface
journal, April 2003
- Martini, S.; Quivy, A. A.; Lamas, T. E.
- Journal of Crystal Growth, Vol. 251, Issue 1-4
Stoichiometry control of the electronic properties of the LaAlO3/SrTiO3 heterointerface
journal, June 2013
- Sato, H. K.; Bell, C.; Hikita, Y.
- Applied Physics Letters, Vol. 102, Issue 25
Magnetic effects at the interface between non-magnetic oxides
journal, June 2007
- Brinkman, A.; Huijben, M.; van Zalk, M.
- Nature Materials, Vol. 6, Issue 7, p. 493-496
Cracking of thin bonded films in residual tension
journal, January 1992
- Beuth, J. L.
- International Journal of Solids and Structures, Vol. 29, Issue 13
Oxide Interfaces--An Opportunity for Electronics
journal, March 2010
- Mannhart, J.; Schlom, D. G.
- Science, Vol. 327, Issue 5973, p. 1607-1611
GaN and AlxGa1−xN molecular beam epitaxy monitored by reflection high-energy electron diffraction
journal, September 1997
- Grandjean, N.; Massies, J.
- Applied Physics Letters, Vol. 71, Issue 13
The effect of in-plane strain on the electronic properties of LaAlO3/SrTiO3 interface
journal, March 2015
- Du, Yanling; Wang, Chunlei; Li, Jichao
- Computational Materials Science, Vol. 99
Growth mechanism and characterization of zinc oxide microcages
journal, May 2004
- Fan, Hong Jin; Scholz, Roland; Kolb, Florian M.
- Solid State Communications, Vol. 130, Issue 8
Strain relaxation analysis of LaAlO 3 /SrTiO 3 heterostructure using reciprocal lattice mapping
journal, February 2012
- Wei, Wei; Sehirlioglu, Alp
- Applied Physics Letters, Vol. 100, Issue 7
Relaxation of strained InGaAs during molecular beam epitaxy
journal, July 1990
- Whaley, G. J.; Cohen, P. I.
- Applied Physics Letters, Vol. 57, Issue 2
Interface Physics in Complex Oxide Heterostructures
journal, March 2011
- Zubko, Pavlo; Gariglio, Stefano; Gabay, Marc
- Annual Review of Condensed Matter Physics, Vol. 2, Issue 1
Influence of SrTiO 3 substrate miscut angle on the transport properties of LaAlO 3 /SrTiO 3 interfaces
journal, July 2011
- Fix, T.; Schoofs, F.; Bi, Z.
- Applied Physics Letters, Vol. 99, Issue 2
Influence of the growth conditions on the LaAIO 3 /SrTiO 3 interface electronic properties
journal, July 2010
- Cancellieri, C.; Reyren, N.; Gariglio, S.
- EPL (Europhysics Letters), Vol. 91, Issue 1
Suppression of Octahedral Tilts and Associated Changes in Electronic Properties at Epitaxial Oxide Heterostructure Interfaces
journal, August 2010
- Borisevich, A. Y.; Chang, H. J.; Huijben, M.
- Physical Review Letters, Vol. 105, Issue 8
Growth-induced electron mobility enhancement at the LaAlO 3 /SrTiO 3 interface
journal, February 2015
- Fête, A.; Cancellieri, C.; Li, D.
- Applied Physics Letters, Vol. 106, Issue 5
Structure-Property Relation of SrTiO3/LaAlO3 Interfaces
journal, May 2009
- Huijben, Mark; Brinkman, Alexander; Koster, Gertjan
- Advanced Materials, Vol. 21, Issue 17, p. 1665-1677
Investigation and control of microcracks in tin oxide gas sensing thin-films
journal, September 2001
- Tang, Zhenan; Chan, Philip C. H.; Sharma, Rajnish K.
- Sensors and Actuators B: Chemical, Vol. 79, Issue 1
Avoiding the Polarization Catastrophe in Overlayers on through Polar Distortion
journal, March 2009
- Pentcheva, Rossitza; Pickett, Warren E.
- Physical Review Letters, Vol. 102, Issue 10
Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain
journal, February 2011
- Bark, C. W.; Felker, D. A.; Wang, Y.
- Proceedings of the National Academy of Sciences, Vol. 108, Issue 12
Electronic correlation and strain effects at the interfaces between polar and nonpolar complex oxides
journal, August 2012
- Annadi, A.; Putra, A.; Liu, Z. Q.
- Physical Review B, Vol. 86, Issue 8
Growth mode transition from layer by layer to step flow during the growth of heteroepitaxial SrRuO3 on (001) SrTiO3
journal, September 2001
- Choi, J.; Eom, C. B.; Rijnders, G.
- Applied Physics Letters, Vol. 79, Issue 10
Emergent phenomena at oxide interfaces
journal, January 2012
- Hwang, H. Y.; Iwasa, Y.; Kawasaki, M.
- Nature Materials, Vol. 11, Issue 2
A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface
journal, January 2004
- Ohtomo, A.; Hwang, H. Y.
- Nature, Vol. 427, Issue 6973
Control of Octahedral Tilts and Magnetic Properties of Perovskite Oxide Heterostructures by Substrate Symmetry
journal, November 2010
- He, Jun; Borisevich, Albina; Kalinin, Sergei V.
- Physical Review Letters, Vol. 105, Issue 22
Calculation of critical layer thickness versus lattice mismatch for Ge x Si 1− x /Si strained‐layer heterostructures
journal, August 1985
- People, R.; Bean, J. C.
- Applied Physics Letters, Vol. 47, Issue 3
Why some interfaces cannot be sharp
journal, January 2006
- Nakagawa, Naoyuki; Hwang, Harold Y.; Muller, David A.
- Nature Materials, Vol. 5, Issue 3, p. 204-209
Triple crystal diffractometer investigations of silicon crystals with different collimator-analyzer arrangements
journal, April 1982
- Zaumseil, P.; Winter, U.
- physica status solidi (a), Vol. 70, Issue 2
Superconducting Interfaces Between Insulating Oxides
journal, August 2007
- Reyren, N.; Thiel, S.; Caviglia, A. D.
- Science, Vol. 317, Issue 5842
Built-in and induced polarization across LaAlO3/SrTiO3 heterojunctions
journal, October 2010
- Singh-Bhalla, Guneeta; Bell, Christopher; Ravichandran, Jayakanth
- Nature Physics, Vol. 7, Issue 1
Optimized transport properties of LaAlO 3 / SrTiO 3 heterointerfaces by variation of pulsed laser fluence
journal, June 2011
- Schoofs, F.; Fix, T.; Kalabukhov, A. S.
- Journal of Physics: Condensed Matter, Vol. 23, Issue 30
Electronic and Magnetic Properties of SrTiO3/LaAlO3 Interfaces from First Principles
journal, April 2010
- Chen, Hanghui; Kolpak, Alexie M.; Ismail-Beigi, Sohrab
- Advanced Materials, Vol. 22, Issue 26-27
Structural phases of strained driven by octahedral tilt instabilities
journal, November 2010
- Hatt, Alison J.; Spaldin, Nicola A.
- Physical Review B, Vol. 82, Issue 19
Effect of oxygen vacancies in the substrate on the electrical properties of the interface
journal, March 2007
- Kalabukhov, Alexey; Gunnarsson, Robert; Börjesson, Johan
- Physical Review B, Vol. 75, Issue 12
Ultrathin oxide films and interfaces for electronics and spintronics
journal, February 2011
- Bibes, Manuel; Villegas, Javier E.; Barthélémy, Agnès
- Advances in Physics, Vol. 60, Issue 1
Stoichiometry of LaAlO 3 films grown on SrTiO 3 by pulsed laser deposition
journal, July 2013
- Golalikhani, M.; Lei, Q. Y.; Chen, G.
- Journal of Applied Physics, Vol. 114, Issue 2
Dynamics of film growth of GaAs by MBE from Rheed observations
journal, May 1983
- Neave, J. H.; Joyce, B. A.; Dobson, P. J.
- Applied Physics A Solids and Surfaces, Vol. 31, Issue 1
Anisotropy of the superconducting transport properties of the LaAlO3/SrTiO3 interface
journal, March 2009
- Reyren, N.; Gariglio, S.; Caviglia, A. D.
- Applied Physics Letters, Vol. 94, Issue 11
Octahedral rotations in strained LaAlO 3 /SrTiO 3 (001) heterostructures
journal, February 2014
- Fister, T. T.; Zhou, H.; Luo, Z.
- APL Materials, Vol. 2, Issue 2
Strain relaxation and critical thickness for epitaxial LaAlO3 thin films grown on SrTiO3(001) substrates by molecular beam epitaxy
journal, August 2007
- Merckling, C.; El-Kazzi, M.; Delhaye, G.
- Journal of Crystal Growth, Vol. 306, Issue 1
Enhancing Electron Mobility at the LaAlO 3 /SrTiO 3 Interface by Surface Control
journal, July 2013
- Xie, Yanwu; Bell, Christopher; Hikita, Yasuyuki
- Advanced Materials, Vol. 25, Issue 34
Structural phases of strained LaAlO3 driven by octahedral tilt instabilities
text, January 2008
- Hatt, Alison J.; Spaldin, Nicola A.
- arXiv
Structure-Property Relation of SrTiO3-LaAlO3 Interfaces
preprint, January 2008
- Huijben, M.; Brinkman, A.; Koster, G.
- arXiv
Built-in and induced polarization across LaAlO$_3$/SrTiO$_3$ heterojunctions
text, January 2010
- Singh-Bhalla, Guneeta; Bell, Christopher; Ravichandran, Jayakanth
- arXiv
Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain
text, January 2010
- Bark, C. W.; Felker, D. A.; Wang, Y.
- arXiv
Growth-induced electron mobility enhancement at the LaAlO$_3$/SrTiO$_3$ interface
text, January 2015
- Fête, A.; Cancellieri, C.; Li, D.
- arXiv
Why Some Interfaces Cannot be Sharp
text, January 2005
- Nakagawa, Naoyuki; Hwang, Harold Y.; Muller, David A.
- arXiv
Works referencing / citing this record:
Rewritable Optical Memory Based on Sign Switching of Magnetoresistance
journal, November 2019
- He, Anpeng; Liu, Guozhen; Lu, Hao
- Advanced Electronic Materials, Vol. 6, Issue 1
Magnetoresistance and photoelectrical properties of electron gases at SrTiO 3 (1 0 0) surface
journal, July 2019
- He, A. P.; Jiang, Y. C.; Chen, J. Q.
- Journal of Physics D: Applied Physics, Vol. 52, Issue 37
Oxygen vacancies modulated photoelectrical properties in LaAlO 3 /SrTiO 3 interface
journal, April 2018
- Liu, Guozhen; Qiu, Jie; Jiang, Yucheng
- Materials Research Express, Vol. 5, Issue 4