skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Investigation of the thermal stability of Mo-In0.45Ga0.47As for applications as source/drain contacts

Authors:
 [1];  [2];  [1];  [2];  [3];  [3];  [1]
  1. Department of Physical Sciences, Dublin City University, Glasnevin, Dublin 9, Ireland
  2. National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
  3. SEMATECH, 257 Fuller Road, Suite 2200, Albany, New York 12203, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1328523
Grant/Contract Number:  
AC02-98CH10886
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 120 Journal Issue: 13; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Walsh, Lee A., Weiland, Conan, McCoy, Anthony P., Woicik, Joseph C., Lee, Rinus T. P., Lysaght, Pat, and Hughes, Greg. Investigation of the thermal stability of Mo-In0.45Ga0.47As for applications as source/drain contacts. United States: N. p., 2016. Web. doi:10.1063/1.4964251.
Walsh, Lee A., Weiland, Conan, McCoy, Anthony P., Woicik, Joseph C., Lee, Rinus T. P., Lysaght, Pat, & Hughes, Greg. Investigation of the thermal stability of Mo-In0.45Ga0.47As for applications as source/drain contacts. United States. doi:10.1063/1.4964251.
Walsh, Lee A., Weiland, Conan, McCoy, Anthony P., Woicik, Joseph C., Lee, Rinus T. P., Lysaght, Pat, and Hughes, Greg. Tue . "Investigation of the thermal stability of Mo-In0.45Ga0.47As for applications as source/drain contacts". United States. doi:10.1063/1.4964251.
@article{osti_1328523,
title = {Investigation of the thermal stability of Mo-In0.45Ga0.47As for applications as source/drain contacts},
author = {Walsh, Lee A. and Weiland, Conan and McCoy, Anthony P. and Woicik, Joseph C. and Lee, Rinus T. P. and Lysaght, Pat and Hughes, Greg},
abstractNote = {},
doi = {10.1063/1.4964251},
journal = {Journal of Applied Physics},
number = 13,
volume = 120,
place = {United States},
year = {2016},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4964251

Save / Share:

Works referenced in this record:

Height-selective etching for regrowth of self-aligned contacts using MBE
journal, March 2009


Ni-(In,Ga)As Alloy Formation Investigated by Hard-X-Ray Photoelectron Spectroscopy and X-Ray Absorption Spectroscopy
journal, December 2014


CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs
journal, August 2012


Chemical analysis of HfO2∕Si (100) film systems exposed to NH3 thermal processing
journal, January 2007

  • Lysaght, Patrick S.; Barnett, Joel; Bersuker, Gennadi I.
  • Journal of Applied Physics, Vol. 101, Issue 2
  • DOI: 10.1063/1.2422746

Schottky barriers and semiconductor band structures
journal, November 1985


Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n + -In 0.53 Ga 0.47 As
journal, October 2014

  • Abraham, Michael; Yu, Shih-Ying; Choi, Won Hyuck
  • Journal of Applied Physics, Vol. 116, Issue 16
  • DOI: 10.1063/1.4900535

Calculations of electron inelastic mean free paths. IX. Data for 41 elemental solids over the 50 eV to 30 keV range
journal, February 2011

  • Tanuma, S.; Powell, C. J.; Penn, D. R.
  • Surface and Interface Analysis, Vol. 43, Issue 3
  • DOI: 10.1002/sia.3522

Characterization of low-resistance ohmic contacts to n - and p -type InGaAs
journal, July 2013

  • Lin, J. C.; Yu, S. Y.; Mohney, S. E.
  • Journal of Applied Physics, Vol. 114, Issue 4
  • DOI: 10.1063/1.4816097

Initiation of a passivated interface between hafnium oxide and In(Ga)As(0 0 1)−(4×2)
journal, June 2010

  • Clemens, Jonathon B.; Bishop, Sarah R.; Lee, Joon Sung
  • The Journal of Chemical Physics, Vol. 132, Issue 24
  • DOI: 10.1063/1.3427584

Crystal structure and epitaxial relationship of Ni 4 InGaAs 2 films formed on InGaAs by annealing
journal, January 2013

  • Ivana, ; Lim Foo, Yong; Zhang, Xingui
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 31, Issue 1
  • DOI: 10.1116/1.4769266

InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology
journal, June 2009

  • Singisetti, Uttam; Wistey, Mark A.; Burek, Gregory J.
  • physica status solidi (c), Vol. 6, Issue 6
  • DOI: 10.1002/pssc.200881532

A Self-Aligned Ni-InGaAs Contact Technology for InGaAs Channel n-MOSFETs
journal, January 2012

  • Zhang, Xingui; Guo, Hua Xin
  • Journal of The Electrochemical Society, Vol. 159, Issue 5
  • DOI: 10.1149/2.060205jes

Ultralow resistance in situ Ohmic contacts to InGaAs/InP
journal, November 2008

  • Singisetti, Uttam; Wistey, Mark A.; Zimmerman, Jeramy D.
  • Applied Physics Letters, Vol. 93, Issue 18
  • DOI: 10.1063/1.3013572

Band alignment of atomic layer deposited HfO2 on clean and N passivated germanium surfaces
journal, December 2010

  • Rumaiz, Abdul K.; Woicik, J. C.; Carini, G. A.
  • Applied Physics Letters, Vol. 97, Issue 24
  • DOI: 10.1063/1.3524262

In[sub 0.7]Ga[sub 0.3]As Channel n-MOSFET with Self-Aligned Ni–InGaAs Source and Drain
journal, January 2011

  • Zhang, Xingui; Guo, Huaxin; Gong, Xiao
  • Electrochemical and Solid-State Letters, Vol. 14, Issue 2
  • DOI: 10.1149/1.3516213

Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs
journal, January 2009

  • Baraskar, Ashish K.; Wistey, Mark A.; Jain, Vibhor
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 27, Issue 4
  • DOI: 10.1116/1.3182737

Ex situ Ohmic contacts to n-InGaAs
journal, July 2010

  • Baraskar, Ashish; Wistey, Mark A.; Jain, Vibhor
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 28, Issue 4
  • DOI: 10.1116/1.3454372