skip to main content

DOE PAGESDOE PAGES

This content will become publicly available on March 15, 2017

Title: Nanowire growth kinetics in aberration corrected environmental transmission electron microscopy

Here, we visualize atomic level dynamics during Si nanowire growth using aberration corrected environmental transmission electron microscopy, and compare with lower pressure results from ultra-high vacuum microscopy. We discuss the importance of higher pressure observations for understanding growth mechanisms and describe protocols to minimize effects of the higher pressure background gas.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [3]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States); National Chiao Tung Univ., Hsinchu (Taiwan); IBM T.J. Watson Research Center, Yorktown Heights, NY (United States)
  2. IBM T.J. Watson Research Center, Yorktown Heights, NY (United States); Univ. of Cambridge, Cambridge (United Kingdom)
  3. IBM T.J. Watson Research Center, Yorktown Heights, NY (United States)
  4. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
OSTI Identifier:
1328372
Report Number(s):
BNL--112678-2016-JA
Journal ID: ISSN 1359-7345; CHCOFS; R&D Project: 16060; 16060; KC0403020
Grant/Contract Number:
SC00112704
Type:
Accepted Manuscript
Journal Name:
ChemComm
Additional Journal Information:
Journal Volume: 52; Journal Issue: 33; Journal ID: ISSN 1359-7345
Publisher:
Royal Society of Chemistry
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY nanowire growth; semiconductors; transmission electron microscopy; Center for Functional Nanomaterials