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Title: Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method

Authors:
ORCiD logo ; ; ; ; ; ; ;
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Crystal Growth
Additional Journal Information:
Journal Volume: 452; Journal Issue: C; Related Information: CHORUS Timestamp: 2018-09-16 08:28:44; Journal ID: ISSN 0022-0248
Publisher:
Elsevier
Sponsoring Org:
USDOE
Country of Publication:
Netherlands
Language:
English
OSTI Identifier:
1328217

Guo, Jianqiu, Yang, Yu, Wu, Fangzhen, Sumakeris, Joe, Leonard, Robert, Goue, Ouloide, Raghothamachar, Balaji, and Dudley, Michael. Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method. Netherlands: N. p., Web. doi:10.1016/j.jcrysgro.2015.12.028.
Guo, Jianqiu, Yang, Yu, Wu, Fangzhen, Sumakeris, Joe, Leonard, Robert, Goue, Ouloide, Raghothamachar, Balaji, & Dudley, Michael. Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method. Netherlands. doi:10.1016/j.jcrysgro.2015.12.028.
Guo, Jianqiu, Yang, Yu, Wu, Fangzhen, Sumakeris, Joe, Leonard, Robert, Goue, Ouloide, Raghothamachar, Balaji, and Dudley, Michael. 2016. "Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method". Netherlands. doi:10.1016/j.jcrysgro.2015.12.028.
@article{osti_1328217,
title = {Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H–SiC crystals grown by PVT method},
author = {Guo, Jianqiu and Yang, Yu and Wu, Fangzhen and Sumakeris, Joe and Leonard, Robert and Goue, Ouloide and Raghothamachar, Balaji and Dudley, Michael},
abstractNote = {},
doi = {10.1016/j.jcrysgro.2015.12.028},
journal = {Journal of Crystal Growth},
number = C,
volume = 452,
place = {Netherlands},
year = {2016},
month = {10}
}