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Title: Origin and tunability of unusually large surface capacitance in doped cerium oxide studied by ambient-pressure X-ray photoelectron spectroscopy

Here, the volumetric redox (chemical) capacitance of the surface of CeO 2–δ films is quantified in situ to be 100-fold larger than the bulk values under catalytically relevant conditions. Sm addition slightly lowers the surface oxygen nonstoichiometry, but effects a 10-fold enhancement in surface chemical capacitance by mitigating defect interactions, highlighting the importance of differential nonstoichiometry for catalysis.
Authors:
 [1] ;  [2] ;  [2] ;  [3]
  1. Stanford Univ., Stanford, CA (United States)
  2. Sandia National Lab. (SNL-CA), Livermore, CA (United States)
  3. Sandia National Lab. (SNL-CA), Livermore, CA (United States); Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Publication Date:
Report Number(s):
SAND-016-9423J
Journal ID: ISSN 0935-9648; 647625
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 28; Journal Issue: 23; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 36 MATERIALS SCIENCE; ceria; redox; catalysis; nonstoichiometry; in-situ
OSTI Identifier:
1327906

Gopal, Chirranjeevi Balaji, Gabaly, Farid El, McDaniel, Anthony H., and Chueh, William C.. Origin and tunability of unusually large surface capacitance in doped cerium oxide studied by ambient-pressure X-ray photoelectron spectroscopy. United States: N. p., Web. doi:10.1002/adma.201506333.
Gopal, Chirranjeevi Balaji, Gabaly, Farid El, McDaniel, Anthony H., & Chueh, William C.. Origin and tunability of unusually large surface capacitance in doped cerium oxide studied by ambient-pressure X-ray photoelectron spectroscopy. United States. doi:10.1002/adma.201506333.
Gopal, Chirranjeevi Balaji, Gabaly, Farid El, McDaniel, Anthony H., and Chueh, William C.. 2016. "Origin and tunability of unusually large surface capacitance in doped cerium oxide studied by ambient-pressure X-ray photoelectron spectroscopy". United States. doi:10.1002/adma.201506333. https://www.osti.gov/servlets/purl/1327906.
@article{osti_1327906,
title = {Origin and tunability of unusually large surface capacitance in doped cerium oxide studied by ambient-pressure X-ray photoelectron spectroscopy},
author = {Gopal, Chirranjeevi Balaji and Gabaly, Farid El and McDaniel, Anthony H. and Chueh, William C.},
abstractNote = {Here, the volumetric redox (chemical) capacitance of the surface of CeO2–δ films is quantified in situ to be 100-fold larger than the bulk values under catalytically relevant conditions. Sm addition slightly lowers the surface oxygen nonstoichiometry, but effects a 10-fold enhancement in surface chemical capacitance by mitigating defect interactions, highlighting the importance of differential nonstoichiometry for catalysis.},
doi = {10.1002/adma.201506333},
journal = {Advanced Materials},
number = 23,
volume = 28,
place = {United States},
year = {2016},
month = {3}
}