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Title: Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy

Abstract

Layered materials are an actively pursued area of research for realizing highly scaled technologies involving both traditional device structures as well as new physics. Lately, non-equilibrium growth of 2D materials using molecular beam epitaxy (MBE) is gathering traction in the scientific community and here we aim to highlight one of its strengths, growth of abrupt heterostructures, and superlattices (SLs). In this work we present several of the firsts: first growth of MoTe 2 by MBE, MoSe 2 on Bi 2Se 3 SLs, transition metal dichalcogenide (TMD) SLs, and lateral junction between a quintuple atomic layer of Bi 2Te 3 and a triple atomic layer of MoTe 2. In conclusion, reflected high electron energy diffraction oscillations presented during the growth of TMD SLs strengthen our claim that ultrathin heterostructures with monolayer layer control is within reach.

Authors:
ORCiD logo [1];  [2];  [2];  [3];  [4];  [4];  [2];  [4];  [4];  [3];  [2];  [1];  [1]
  1. Cornell Univ., Ithaca, NY (United States); Univ. of Notre Dame, Notre Dame, IN (United States)
  2. Univ. of Notre Dame, Notre Dame, IN (United States)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  4. Univ. of Texas at Dallas, Richardson, TX (United States)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE
OSTI Identifier:
1327713
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Materials Research
Additional Journal Information:
Journal Volume: 31; Journal Issue: 07; Journal ID: ISSN 0884-2914
Publisher:
Materials Research Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; STEM; EELS; 2D materials

Citation Formats

Vishwanath, Suresh, Liu, Xinyu, Rouvimov, Sergei, Basile, Leonardo, Lu, Ning, Azcatl, Angelica, Magno, Katrina, Wallace, Robert M., Kim, Moon, Idrobo, Juan -Carlos, Furdyna, Jacek K., Jena, Debdeep, and Xing, Huili Grace. Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy. United States: N. p., 2016. Web. doi:10.1557/jmr.2015.374.
Vishwanath, Suresh, Liu, Xinyu, Rouvimov, Sergei, Basile, Leonardo, Lu, Ning, Azcatl, Angelica, Magno, Katrina, Wallace, Robert M., Kim, Moon, Idrobo, Juan -Carlos, Furdyna, Jacek K., Jena, Debdeep, & Xing, Huili Grace. Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy. United States. doi:10.1557/jmr.2015.374.
Vishwanath, Suresh, Liu, Xinyu, Rouvimov, Sergei, Basile, Leonardo, Lu, Ning, Azcatl, Angelica, Magno, Katrina, Wallace, Robert M., Kim, Moon, Idrobo, Juan -Carlos, Furdyna, Jacek K., Jena, Debdeep, and Xing, Huili Grace. Wed . "Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy". United States. doi:10.1557/jmr.2015.374. https://www.osti.gov/servlets/purl/1327713.
@article{osti_1327713,
title = {Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy},
author = {Vishwanath, Suresh and Liu, Xinyu and Rouvimov, Sergei and Basile, Leonardo and Lu, Ning and Azcatl, Angelica and Magno, Katrina and Wallace, Robert M. and Kim, Moon and Idrobo, Juan -Carlos and Furdyna, Jacek K. and Jena, Debdeep and Xing, Huili Grace},
abstractNote = {Layered materials are an actively pursued area of research for realizing highly scaled technologies involving both traditional device structures as well as new physics. Lately, non-equilibrium growth of 2D materials using molecular beam epitaxy (MBE) is gathering traction in the scientific community and here we aim to highlight one of its strengths, growth of abrupt heterostructures, and superlattices (SLs). In this work we present several of the firsts: first growth of MoTe2 by MBE, MoSe2 on Bi2Se3 SLs, transition metal dichalcogenide (TMD) SLs, and lateral junction between a quintuple atomic layer of Bi2Te3 and a triple atomic layer of MoTe2. In conclusion, reflected high electron energy diffraction oscillations presented during the growth of TMD SLs strengthen our claim that ultrathin heterostructures with monolayer layer control is within reach.},
doi = {10.1557/jmr.2015.374},
journal = {Journal of Materials Research},
number = 07,
volume = 31,
place = {United States},
year = {2016},
month = {1}
}

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